2003
DOI: 10.1016/s0168-9002(03)01136-7
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Trace impurities analysis determined by neutron activation in the PbI2 crystal semiconductor

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Cited by 8 publications
(4 citation statements)
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“…The subsequent determination of bromine concentration as dopant in the CsI: Br crystals was performed by neutron activation analysis (NAA) [8]. The investigated dopant concentrations were 10 The dopant concentration profile in the CsI: Br crystal (10 −1 M nominal concentration) was determinated by the same method.…”
Section: Methodsmentioning
confidence: 99%
“…The subsequent determination of bromine concentration as dopant in the CsI: Br crystals was performed by neutron activation analysis (NAA) [8]. The investigated dopant concentrations were 10 The dopant concentration profile in the CsI: Br crystal (10 −1 M nominal concentration) was determinated by the same method.…”
Section: Methodsmentioning
confidence: 99%
“…O Laboratório de crescimento e purificação de cristais -IPEN desenvolveu uma metodologia para a preparação dos sais de: PbI 2 , TlBr e BiI 3 para o crescimento dos cristais, visando sua aplicação como detector de radiação. Esta metodologia consistiu de: 1) purificação dos sais comerciais (PbI 2 , TlBr e BiI 3 ) com graus de pureza de 99 a 99,999% de pureza por meio da técnica de "purificação por refinamento zonal"; 2) avaliação da eficiência de purificação por meio da determinação de impurezas presentes nos materiais por INAA [9][10][11][12][13][14]. Verificou-se que INAA permitiu verificar significante redução de impurezas, de acordo com os números de passos de purificação.…”
Section: Determinação De Au Em Resíduos De Carvão Ativadounclassified
“…To investigate the effectiveness of purification, the impurity analysis in PbI 2 crystal semiconductor has been done using NAA technique (Hamada et al 2003). or contaminants remaining due to incomplete purification of the semiconductor material during device manufacture.…”
Section: In Materials Science (Detection Of Components Of Metals Semimentioning
confidence: 99%