Tracce. Psicoanalisi e gruppoanalisi (1981)

Napolitani, Diego

doi:10.3280/pu2013-003004

Cited by 1 publication

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[19,20] In support of this statement, high resolution x-ray diffraction showed a lattice strain in our Alimplanted Ge samples (not shown) lower than 0.03% in the entire depth range. [13] This leads, according to Peng et al, [21] to a shift and broadening of the Ge-Ge Raman peak much smaller than those reported in Fig. 3.…”

Section: Ge-ge Raman Peakmentioning

confidence: 75%

“…Concerning the lattice strain, this generally does not exceed a few tenths of percent in implanted and annealed samples, also in the case of high doping level . In support of this statement, high resolution x‐ray diffraction showed a lattice strain in our Al‐implanted Ge samples (not shown) lower than 0.03% in the entire depth range . This leads, according to Peng et al ., to a shift and broadening of the Ge–Ge Raman peak much smaller than those reported in Fig.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Sanson

Giarola

Napolitani

et al. 2013

J Raman Spectroscopy

View full text Add to dashboard Cite

The distribution profile of Al implanted in crystalline Ge has been investigated by micro-Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm1, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm1. According to these experimental findings, we propose here a fast and nondestructive method, based on micro-Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al-implanted Ge

show abstract

Section: Ge-ge Raman Peakmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 99%