Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Abstract

El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription On the other hand, it is still necessary to understand the role of the growth parameters to produce kesterite material with the optimum properties for maximum device efficiency. fabricated by a sequential, or two-stage, process: deposition of precursor followed by post-sulfurization/selenization. This is advantageous due to its capability and high throughput. However, it is also desirable to reduce the number of stages during the growth process.

Large Efficiency Improvement in Cu2ZnSnSe4 Solar Cells by Introducing a Superficial Ge Nanolayer

“…This shift can be originated by either rather small Ge quantity incorporation in the lattice or the improvement of the crystalline quality. [ 22 ] The situation is markedly different at the back region of both samples, where very similar Raman shift and FWHMs are obtained suggesting that the Ge surface approach has a limited impact on this region. Despite the low Ge incorporation, the decreased full width at half maximum (FWHM) of the A 1 modes recorded at the surface clearly evidences the increased crystalline quality of Ge10.…”

“…[ 20,21 ] As is observed, the main A 1 mode at the surface region of the Ge10 sample is only slightly blueshifted with respect to the reference sample by only 0.26 cm −1 . [ 21,22 ] By supposing that the shift is completely related to the Sn substitution by Ge, the Ge/(Ge+Sn) ratio in the surface region can be estimated to be lower than 2%. [ 21,22 ] By supposing that the shift is completely related to the Sn substitution by Ge, the Ge/(Ge+Sn) ratio in the surface region can be estimated to be lower than 2%.…”

Magnetotransport and conductivity mechanisms in Cu2ZnSnxGe1−xS4 single crystals

“…In addition to photovoltaics, the structural and optical properties of CZTGS 11,13,15–17 , as well as the vibrational properties of this material 16–19 have been studied. On the other hand, investigations of the electronic transport in CZTGS solid solutions are lacking up to date.…”

Effect of deposition temperature on the growth mechanism of chemically prepared CZTGeS thin films

“…It can be concluded from results of the chemical analysis (Table ) that the deposited thin films have a nonstoichiometric composition, but concentrations of the components are within the acceptable range for the formation of CZTGeS compound …”

“…The nonmonotonic change in the sizes of nanocrystals depending on the deposition temperature can be explained by the following assumption: At lower temperatures, there is a sufficient amount of thermal energy for the growth of large crystals, but at higher temperatures In Table 1 It can be concluded from results of the chemical analysis (Table 1) that the deposited thin films have a nonstoichiometric composition, but concentrations of the components are within the acceptable range for the formation of CZTGeS compound. 29…”