Towards sustainable materials for solar energy conversion: Preparation and photoelectrochemical characterization of Cu2ZnSnS4

Scragg, Jonathan J.; Dale, Phillip J.; Peter, Laurence M.

doi:10.1016/j.elecom.2008.02.008

Cited by 274 publications

(162 citation statements)

References 15 publications

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“…Such characteristics make them the low-cost alternative to the conventional photovoltaic materials like Si, CdTe and CuIn 1−x Ga x Se 2 [8,9]. While significant attention has been paid to CZTS and CZTSe [1,10,11], most of the other compounds in this family remain relatively unexplored. Limited theoretical attention has been paid to these chalcogenides, so their electronic structure and optical properties remain unclear, which limits their usage in semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

“…Among these compounds, Cu 2 ZnSnS 4 (CZTS) and Cu 2 ZnSnSe 4 (CZTSe) combine promising characteristics for optoelectronic applications (e.g. direct band gap of 1.0-1.4 eV, * nasrin.sarmadian@uantwerpen.be a high optical absorption coefficient up to 10 5 cm −1 , and a relatively high abundance of the elements [4,8,9]). Such characteristics make them the low-cost alternative to the conventional photovoltaic materials like Si, CdTe and CuIn 1−x Ga x Se 2 [8,9].…”

Section: Introductionmentioning

confidence: 99%

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First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

Sarmadian

Saniz

Partoens

et al. 2016

Journal of Applied Physics

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Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger is used as a metric for the screening. After constructing the current-voltage curve, the maximum spectroscopydependent power conversion efficiency is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II=Cd and Hg, and Cu2-II-SnS4 with II=Cd and Zn have a higher theoretical efficiency compared to the materials currently used as absorber layer.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

Sarmadian

Saniz

Partoens

et al. 2016

Journal of Applied Physics

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“…The main difference in the band structure between the HLP and SLP is a lower band gap when the SLP are used. These results present the well-known gapunderestimation problem with respect to the experimental data (1.4-1.6eV [12][13][14][15][16][17][18][19]). Nevertheless, these results present a lower underestimation than other theoretical data in the literature with similar methods (-0.09 eV using the GGA [20,21]), although larger than more sophisticated hybrid functional methods (~1.5 eV [20,21]).…”

Section: Resultsmentioning

confidence: 83%

“…A broad range of techniques have been explored to deposit CZTS films: sulfurization of sputtered [3][4][5] or evaporated [6] stacked films, spray method [7,8], sol-gel method [9], hydrazine deposition [10], and electrode deposition [11]. Their properties have been extensively studied both experimentally [12][13][14][15][16][17][18][19] and theoretically [20][21][22][23]. The experimental samples usually crystallize in kesterite-type structure because it is more stable thermodynamically than the stannite-type, although the stannite-type structure can be formed through a two step process [24], In addition to the relatively abundant constituents, with low-cost and nontoxic, CZTS has potentially interesting properties for optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

Tablero

2014

Solar Energy Materials and Solar Cells

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The substitution of cation atoms by V, Cr and Ir in the natural and synthetic quaternary Cu2ZnSnS4 semiconductor is analyzed using first-principles methods. In most of the substitutions, the electronic structure of these modified CZTS is characterized for intermediate bands with different occupation and position within of the energy band gap. A study of the symmetry and composition of these intermediate bands is carried out for all substitutions.These bands permit additional photon absorption and emission channels depending on their occupation. The optical properties are obtained and analyzed. The absorption coefficients are split into contributions from the different absorption channels and from the inter-and intra-atomic components. The sub bandgap transitions are significant in many cases because the anion states contribute to the valence, conduction and intermediates bands. These properties could therefore be used for novel optoelectronic devices.

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“…• C [19]. According to this, the main limitation of chemical bath deposition method is that the temperature of the bath water cannot exceed 90-95…”

Section: Introductionmentioning

confidence: 99%

Synthetic pathway of a Cu2ZnSnS4 powder using low temperature annealing of nanostructured binary sulfides

Кожевникова¹,

Ворох²,

Гырдасова³

et al. 2017

Nanosystems: Phys. Chem. Math.

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Cost-effective route to quaternary Cu 2 ZnSnS 4 nanostructured powder fabrication was developed by utilizing a two-step approach. In the first stage, nanostructured binary sulfides Cu 2 S, ZnS, and SnS were synthesized by chemical bath deposition. In the second stage, ternary sulfide Cu 2 ZnSnS 4 was obtained by low-temperature annealing of binary sulfides' mixtures at 70 and 300• C. The compounds obtained on both stages were investigated by X-ray diffraction, scanning electron microscopy, optical absorbance and Raman spectroscopy. On the basis of our findings, we established that Cu 2 ZnSnS 4 phase has already formed at 300• C. The synthetic pathway revealed in this work allows reducing the temperature of Cu 2 ZnSnS 4 synthesis and as a result, offers the possibility of reducing the manufacturing costs.

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Towards sustainable materials for solar energy conversion: Preparation and photoelectrochemical characterization of Cu2ZnSnS4

Cited by 274 publications

References 15 publications

First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

Synthetic pathway of a Cu2ZnSnS4 powder using low temperature annealing of nanostructured binary sulfides

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