“…8,44,45) However, L1 0 -ordering of CoPt on the amorphous SiO 2 surfaces of thermally oxidized Si substrates has been challenging because epitaxial growth or lattice-misfit-induced strain cannot be utilized for the growth of L1 0 -CoPt; thus, strict control of the annealing conditions or the choice of proper underlayers was necessary. 49) Recently, by using an EB evaporation method, [50][51][52][53][54][55] we demonstrated the formation of L1 0 -CoPt in equiatomic Co/Pt multilayer thin films on Si/SiO 2 substrates by vacuum annealing, and performed analysis by grazing incidence Xray diffraction (GI-XRD), vibrating sample magnetometer (VSM), and scanning electron microscope (SEM). 56,57) In Pt (6.6 nm)/Co (4.8 nm) bilayer thin films, graded films consisting of L1 2 -ordered Co 3 Pt, L1 0 -CoPt, and L1 2 -ordered CoPt 3 were found to be formed during the interdiffusion of the equiatomic bilayer by rapid thermal annealing (RTA) at 800 °C for 30 s, where the annealed films showed an in-plane H c of 2.1 kOe and a continuous film structure.…”