Towards single electron transistor-based photon detection with microplasma-enabled graphene quantum dots

Abstract

Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasmasynthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.

Large coercivity of 13 kOe in L10-ordered CoPt on Si/SiO2 substrates by hydrogen annealing

“…8,44,45) However, L1 0 -ordering of CoPt on the amorphous SiO 2 surfaces of thermally oxidized Si substrates has been challenging because epitaxial growth or lattice-misfit-induced strain cannot be utilized for the growth of L1 0 -CoPt; thus, strict control of the annealing conditions or the choice of proper underlayers was necessary. 49) Recently, by using an EB evaporation method, [50][51][52][53][54][55] we demonstrated the formation of L1 0 -CoPt in equiatomic Co/Pt multilayer thin films on Si/SiO 2 substrates by vacuum annealing, and performed analysis by grazing incidence Xray diffraction (GI-XRD), vibrating sample magnetometer (VSM), and scanning electron microscope (SEM). 56,57) In Pt (6.6 nm)/Co (4.8 nm) bilayer thin films, graded films consisting of L1 2 -ordered Co 3 Pt, L1 0 -CoPt, and L1 2 -ordered CoPt 3 were found to be formed during the interdiffusion of the equiatomic bilayer by rapid thermal annealing (RTA) at 800 °C for 30 s, where the annealed films showed an in-plane H c of 2.1 kOe and a continuous film structure.…”

Spontaneous Exciton Collapse in a Strongly Flattened Ellipsoidal InSb Quantum Dot

“…Here, n, n r , m and n ′ , n ′ r , m ′ are the QNs of electron and hole, respectively. For comparison (see (20)), in the case of a parabolic dispersion law (e.g., for QD consisting of GaAs ) the total energy in the strong quantum confinement regime is given as [5]:…”

“…In recent years, the most unexpected areas of application of QDs' properties have appeared in the design of new high-tech devices used in science, technology, medical, and domestic appliances fields. On the basis of QDs, quantum lasers, LEDs of various spectra [14][15][16], biochemical sensors [17,18], single-electron diodes and transistors [19,20], and saturated TV screens with a wide range of different colors have been designed and successfully implemented. Recent studies also show that QDs are key objects for the successful implementation of qubits [21][22][23].…”

Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires

“…43 Recently, we have developed a fabrication process for Ptbased nanogap electrodes by a li-off process that combines electron-beam lithography (EBL) and electron-beam (EB) evaporation. [44][45][46][47][48][49] Pt-based nanogap electrodes with an ultrane linewidth of 10 nm were successfully fabricated by optimizing the fabrication conditions. 44 We also reported the L1 0 -ordering of Co/Pt multilayer thin lms on thermally oxidized Si (Si/SiO 2 ) substrates by EB evaporation and annealing processes, which was characterized by scanning electron microscope (SEM), grazing incidence X-ray diffraction (GI-XRD), and vibrating sample magnetometer (VSM).…”

“…Recently, we have developed a fabrication process for Pt-based nanogap electrodes by a lift-off process that combines electron-beam lithography (EBL) and electron-beam (EB) evaporation. 44–49 Pt-based nanogap electrodes with an ultrafine linewidth of 10 nm were successfully fabricated by optimizing the fabrication conditions. 44…”