Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures

Nirschl, A.; Binder, Michael; Schmid, M.; Pietzonka, I.; Lugauer, H.‐J.; Zeisel, R.; Sabathil, M.; Bougeard, Dominique; Galler, Bastian

doi:10.1364/oe.24.002971

Cited by 10 publications

(10 citation statements)

References 24 publications

(34 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We note that in addition to the radiative RC B, where (temperature-independent) calculations have shown a reduction due to random alloying, 6 also the Auger RC C should scale with the electron-hole wave function overlap. The Augur RC C, corresponding to the process involving two delocalized electrons and a localized hole -in line with the experimentally identified dominant Auger process 19,39,40 can be estimated as 41…”

Section: Eqe Maxmentioning

confidence: 53%

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Nippert

Karpov²,

Callsen

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting the quantum efficiency of such devices. In the green spectral range, the efficiency deteriorates, which we assign to a combination of diminishing electronhole wave function overlap and enhanced Auger processes, while a significant reduction in material quality with increased In content can be precluded. Here, we analyze and quantify the entire balance of all loss mechanisms and highlight the particular role of hole localization.

show abstract

Section: Eqe Maxmentioning

confidence: 53%

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Nippert

Karpov²,

Callsen

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…23 Interestingly, for non-polar QWs (and, approximately, screened polar QWs), we find C eeh to be larger than C hhe by a factor of 1-14, depending on the carrier density, which agrees with a recent experimental report that C eeh is larger than C hhe by a factor of 1-12. 27 Our results therefore reveal that the interplay of QW composition, carrier localization, polarization fields, quantum confinement, carrier density, and screening plays an important role in determining the dominant Auger recombination type (eeh or hhe) in InGaN QWs. We further determine the temperature dependence of the radiative and Auger coefficients in fluctuating alloys and compare to virtual crystals.…”

mentioning

confidence: 69%

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Jones

Teng

Yan

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Hence, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Furthermore, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN LEDs.

show abstract

“…41 Although not shown here, doping effects also affect the other (non-radiative) recombination channels. 42 Accordingly, in all the following, results will be shown for pin structures with centered QWs to avoid doping artifacts. Fig.…”

Section: Radiative Recombination-as a Preliminary To Presenting Resultsmentioning

confidence: 99%

Review—The Physics of Recombinations in III-Nitride Emitters

David

Young

Lund

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an emphasis on experimental investigations. After a discussion of various methods of measuring recombination dynamics, important results on recombination physics are examined. The radiative rate displays a complex behavior, influenced by Coulomb interaction and carrier screening. Non-radiative recombinations at low and high current are shown to scale with the overlap of electron-hole wavefunctions, similarly to the radiative rate, leading to a compensation effect which explains the high efficiency of III-nitride emitters. Finally, the droop current is decomposed into two contributions: the well-known Auger scattering, and a defect-assisted droop process, which is shown to play an important role in the green gap.

show abstract

Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures

Cited by 10 publications

References 24 publications

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Review—The Physics of Recombinations in III-Nitride Emitters

Contact Info

Product

Resources

About