Towards prognostics for electronics components

Abstract

Abstract-Electronics components have an increasingly critical role in avionics systems and in the development of future aircraft systems. Prognostics of such components is becoming a very important research field as a result of the need to provide aircraft systems with system level health management information. This paper focuses on a prognostics application for electronics components within avionics systems, and in particular its application to an Isolated Gate Bipolar Transistor (IGBT). This application utilizes the remaining useful life prediction, accomplished by employing the particle filter framework, leveraging data from accelerated aging tests on IGBTs. These tests induced thermal-electrical overstresses by applying thermal cycling to the IGBT devices. In-situ state monitoring, including measurements of steady-state voltages and currents, electrical transients, and thermal transients are recorded and used as potential precursors of failure.

Prognostics of power MOSFET

“…In [1] a model-based prognostics approach for discrete IGBTs was presented. RUL prediction was accomplished using a particle filter algorithm where the collector-emitter current leakage has been used as the primary precursor of failure.…”

Probabilistic Monte-Carlo Method for Modelling and Prediction of Electronics Component Life

“…Fault diagnosis and prognostic, estimation of remaining useful life and health management have vital roles to avoid catastrophic failure, improve aircraft reliability, reduce maintenance cost and increase performance [5]. This paper bases its study on IGBT for development of algorithms for estimating remaining useful life of components, and it is considered to contribute to the prognostic technology development in integrated vehicle health management (IVHM) field and advance the electronic components prognosis.…”

Accelerated aging with electrical overstress and prognostics for power MOSFETs

“…Currently, most ALTs and HALTs for power electronics in the reliability domain focus on thermal stress either through temperature or power cycling [4] and mechanical stress [5]. Within the prognostics domain, the work done so far has mainly looked into electro-thermal cycling induced thermal fatigue ( [6], [7] and [8]). However, purely electrical stress related failures are quite common to power MOSFETs as they are prone to damage from radiation, electro-static discharge (ESD) and lightning surges.…”