2015
DOI: 10.1117/12.2079068
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Towards on-chip generation, routing and detection of non-classical light

Abstract: We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and d… Show more

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Cited by 3 publications
(3 citation statements)
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“…Furthermore, we demonstrate the integration of such SSPDs in quantum dot loaded photonic waveguides for on-chip time-resolved photoluminescence spectroscopy [22] [23]. Finally, we present a first prototype architecture of a fully integrated photonic nano-circuit, consisting of an individual InGaAs quantum dot, a GaAs/AlGaAs ridge waveguide and a waveguide-integrated SSPD, and demonstrate on-chip resonant fluorescence as a initial step towards on-chip quantum coherent information processing [24] [13].…”
mentioning
confidence: 99%
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“…Furthermore, we demonstrate the integration of such SSPDs in quantum dot loaded photonic waveguides for on-chip time-resolved photoluminescence spectroscopy [22] [23]. Finally, we present a first prototype architecture of a fully integrated photonic nano-circuit, consisting of an individual InGaAs quantum dot, a GaAs/AlGaAs ridge waveguide and a waveguide-integrated SSPD, and demonstrate on-chip resonant fluorescence as a initial step towards on-chip quantum coherent information processing [24] [13].…”
mentioning
confidence: 99%
“…In a detailed study [21] we investigated NbN films with thicknesses CDC = 4 − 20 as a function growth temperature I$ and nitrogen partial pressure C K . On such optimized films we established SSPDs employing a combination of electron beam lithography with a negative tone resist and reactive ion etching using a SF 6 /C 4 F 8 plasma [22] [24] . Nanowire SSPDs were arranged in a meander-type fashion with typically 34× loops, nanowire widths 80 ± 10 , nanowire separation 170 ± 10 and a total length of 23 as shown in the scanning electron microscope images in the inset of Figure 1 In order to determine the the performance metrics of our SSPDs, we performed opto-electrical characterization measurements in a low-temperature ( = 4.3 ± 0.1 ) microwave probe station where individual devices can be contacted using mechanically adjustable microwave probes.…”
mentioning
confidence: 99%
“…The optical properties of the quantum dot wafer have been studied at cryogenic temperatures (𝑇 = 4𝐾) using a home-built, dipstick confocal microscope, whereby further details can be found in Ref. [30]. A typical spectrum of the quantum dot ensemble emission, is shown as black curve in Figure 1(b).…”
Section: Sample Layout Nanofabrication and Basic Optical Propertiesmentioning
confidence: 99%