2016
DOI: 10.1016/j.proeng.2016.11.281
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Towards Micromechanical Sensors with (La,Sr)MnO 3 Epitaxial Films

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Cited by 2 publications
(1 citation statement)
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“…Moreover, the room temperature magnetocaloric effect (with different substitutions on the Mn site, such as Ni [13][14][15], Co [16] Cr, St, Ti [17] or with no substitutions at all [18,19]), large planar Hall effect in La 0.7 Sr 0.3 MnO 3 films on MgO (1 0 0) [20], as well as magnetoelastic coupling at the interface between the La 2/3 Sr 1/3 MnO 3 thin films and SrTiO 3 (STO) substrate (due to the STO cubic-tetragonal transition [21]), can be noted. All of these above mentioned magneto-functionalities make La 1−x Sr x MnO 3 systems outstanding candidates for magnetic field sensors [22,23], high-density memory storage devices, tunnel magneto-resistance devices [24,25], pressure sensors [26], micro and nanomechanical resonant sensors [27], solid oxide fuel cells [28], spin injectors in organic spintronics [29] and references therein, non-volatile memory and memristive devices [30], spin light emitting diodes [31], organic light emitting devices (OLEDs) [32,33], spin wave resonance devices [34], uncooled infrared bolometers [35], microwave [36] and radio frequency [37] applications.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the room temperature magnetocaloric effect (with different substitutions on the Mn site, such as Ni [13][14][15], Co [16] Cr, St, Ti [17] or with no substitutions at all [18,19]), large planar Hall effect in La 0.7 Sr 0.3 MnO 3 films on MgO (1 0 0) [20], as well as magnetoelastic coupling at the interface between the La 2/3 Sr 1/3 MnO 3 thin films and SrTiO 3 (STO) substrate (due to the STO cubic-tetragonal transition [21]), can be noted. All of these above mentioned magneto-functionalities make La 1−x Sr x MnO 3 systems outstanding candidates for magnetic field sensors [22,23], high-density memory storage devices, tunnel magneto-resistance devices [24,25], pressure sensors [26], micro and nanomechanical resonant sensors [27], solid oxide fuel cells [28], spin injectors in organic spintronics [29] and references therein, non-volatile memory and memristive devices [30], spin light emitting diodes [31], organic light emitting devices (OLEDs) [32,33], spin wave resonance devices [34], uncooled infrared bolometers [35], microwave [36] and radio frequency [37] applications.…”
Section: Introductionmentioning
confidence: 99%