Towards Low Propagation Losses in Active Photonic Multi-Project Wafer Runs

Carpenter, Lewis G.; Niekerk, Matthew van; Begovic, Amir; Sundaram, Vijay Soorya Shunmuga; Deenadayalan, Venkatesh; Palone, Thomas; Fanto, Michael L.; Preble, Stefan F.; Baiocco, Christopher; Leake, Gerald; Fahrenkopf, Nicholas M.; Harame, D.L.

doi:10.1364/iprsn.2021.itu3a.5

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…All simulations are performed in silicon at 300 K, with a fixed waveguide cross-section of 480 nm × 220 nm (width × height), for which we precompute the spectrally dependent effective index n eff (ω) for the TE polarization using a numerical eigenmode solver. In the interest of presenting an aggressiveyet feasible and foundry-compatible system [54], [55]-we assume a nominal waveguide attenuation of 0.5 dB/cm (α = 0.115 cm −1 ), ring radii r ≈ 20 µm, and symmetric coupling constants κ 2 1 = κ 2 2 κ 2 = 0.01 for each ring in the pulse shaper, comfortably in the overcoupled regime (t 1 = t 2 < A) as desired for an efficient drop port response. Further, ω0 2π = 193 THz and ∆ω 2π = 15 GHz define the nominal frequency mode space ω m used by the pulse shaper (in the telecom band).…”

Section: A Single and Parallel Gatesmentioning

confidence: 99%

Design Methodologies for Integrated Quantum Frequency Processors

Nussbaum¹,

Pizzimenti²,

Lingaraju³

et al. 2022

Preprint

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has been co-authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

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Section: A Single and Parallel Gatesmentioning

confidence: 99%

Design Methodologies for Integrated Quantum Frequency Processors

Nussbaum¹,

Pizzimenti²,

Lingaraju³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Considering the grayscale photoresist in the lithography process and the anisotropy of Si in the etching process, we chose the SOI substrate with a device layer of 3.5 µm for device manufacturing to ensure the line-width change in the process of micromachining. The SOI of the silicon device layer with a thickness of more than 2 µm is commercially available in research institutions, such as VTT [ 12 ] and CEA-LETI [ 10 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Manufacture of Polarization-Independent 3D SOI Vertical Optical Coupler

Chen

2023

Micromachines

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An optical coupler is a key input/output (I/O) device in a photonic integrated circuit (PIC), which plays the role of light-source import and modulated light output. In this research, a vertical optical coupler consisting of a concave mirror and a half-cone edge taper was designed. We optimized the structure of mirror curvature and taper through finite-difference-time-domain (FDTD) and ZEMAX simulation to achieve mode matching between SMF (single-mode fiber) and the optical coupler. The device was fabricated via laser-direct-writing 3D lithography, dry etching and deposition on a 3.5 µm silicon-on-insulator (SOI) platform. The test results show that the overall loss of the coupler and its connected waveguide at 1550 nm was 1.11 dB in transverse-electric (TE) mode and 2.25 dB in transverse-magnetic (TM) mode.

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“…The average losses and bend radius (footprint) of silicon, silicon nitride, and silica photonic platforms as reported in published work; see[28,[49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67].…”

mentioning

confidence: 99%

Comparative Study of Photonic Platforms and Devices for On-Chip Sensing

El Shamy,

Swillam,

2023

Photonics

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Chemical and biological detection is now an indispensable task in many fields. On-chip refractive index (RI) optical sensing is a good candidate for mass-scale, low-cost sensors with high performance. While most literature works focus on enhancing the sensors’ sensitivity and detection limit, other important parameters that determine the sensor’s yield, reliability, and cost-effectiveness are usually overlooked. In this work, we present a comprehensive study of the different integrated photonic platforms, namely silica, silicon nitride, and silicon. Our study aims to determine the best platform for on-chip RI sensing, taking into consideration the different aspects affecting not only the sensing performance of the sensor, but also the sensor’s reliability and effectiveness. The study indicates the advantages and drawbacks of each platform, serving as a guideline for RI sensing design. Modal analysis is used to determine the sensitivity of the waveguide to medium (analyte) index change, temperature fluctuations, and process variations. The study shows that a silicon platform is the best choice for high medium sensitivity and a small footprint. On the other hand, silica is the best choice for a low-loss, low-noise, and fabrication-tolerant design. The silicon nitride platform is a compromise of both. We then define a figure of merit (FOM) that includes the waveguide sensitivity to the different variations, losses, and footprint to compare the different platforms. The defined FOM shows that silicon is the best candidate for RI sensing. Finally, we compare the optical devices used for RI sensing, interferometers, and resonators. Our analysis shows that resonator-based devices can achieve much better sensing performance and detection range, due to their fine Lorentzian spectrum, with a small footprint. Interferometer based-sensors allow engineering of the sensors’ performance and can also be designed to minimize phase errors, such as temperature and fabrication variations, by careful design of the interferometer waveguides. Our analysis and conclusions are also verified by experimental data from other published work.

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Towards Low Propagation Losses in Active Photonic Multi-Project Wafer Runs

Cited by 6 publications

References 3 publications

Design Methodologies for Integrated Quantum Frequency Processors

Design Methodologies for Integrated Quantum Frequency Processors

Design and Manufacture of Polarization-Independent 3D SOI Vertical Optical Coupler

Comparative Study of Photonic Platforms and Devices for On-Chip Sensing

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