Towards halide treatment on CdS thin films for solar cell applications: An evolution to ion size impact on segregation and grain boundaries passivation

Kumari, Suman; Suthar, Deepak; Himanshu, -; Kannan, M.D.; Kumari, Neetu; Dhaka, M.S.

doi:10.1016/j.jallcom.2023.170593

Journal of Alloys and Compounds

2023

DOI: 10.1016/j.jallcom.2023.170593

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Towards halide treatment on CdS thin films for solar cell applications: An evolution to ion size impact on segregation and grain boundaries passivation

Suman Kumari

Deepak Suthar

- Himanshu

et al.

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Cited by 6 publications

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“…Also, from the absorption spectra, the energy band gap was estimated to be 2.4 eV for the CdS film. The measured values closely match the band gaps reported in the literature . Moreover, the absorption of the Sb 2 Se 3 /CdS heterojunction in the visible light range is increased compared to that of the pure CdS film …”

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confidence: 99%

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction

Kaur,

Goswami,

Babu

et al. 2024

J. Phys. Chem. Lett.

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Harvesting solar energy for different applications requires the continuous development of new semiconducting materials to exploit a broad part of the solar spectrum. In this direction, antimony selenide (Sb 2 Se 3 ) has attracted a tremendous amount of attention over the past few years as a light-harvesting material for photovoltaic device applications owing to its phase stability, high absorption coefficient, earth abundance, and low toxicity. Here, we have fabricated a high-quality heterojunction of a p-type Sb 2 Se 3 film and an n-type CdS film using the thermal evaporation technique. The photocurrent of the heterosystem was significantly higher than that of the pristine materials. This optoelectronic response was investigated using femtosecond transient absorption (TA) spectroscopy. TA study reveals the existence of an instantaneous electron transfer from Sb 2 Se 3 to CdS, accompanied by a substantial charge separation at the heterojunction. Our study deals with the investigation of a well-designed p−n device, paving the way for the fabrication of highly efficient photovoltaic devices.

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confidence: 99%

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction

Kaur,

Goswami,

Babu

et al. 2024

J. Phys. Chem. Lett.

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Photoluminescence kinetics of CsPbBr3 nanocrystals with urea as co-ligand by using ultrafast spectroscopy

Liu,

Huang,

Chen

et al. 2023

J Mater Sci

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Characterization of sol gel derived spin coated copper incorporation of CdS films for nonlinear optical applications

Ashith,

D'Silva,

Banerjee

et al. 2024

Current Applied Physics

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Towards halide treatment on CdS thin films for solar cell applications: An evolution to ion size impact on segregation and grain boundaries passivation

Cited by 6 publications

References 76 publications

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction

Photoluminescence kinetics of CsPbBr3 nanocrystals with urea as co-ligand by using ultrafast spectroscopy

Characterization of sol gel derived spin coated copper incorporation of CdS films for nonlinear optical applications

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Towards halide treatment on CdS thin films for solar cell applications: An evolution to ion size impact on segregation and grain boundaries passivation

Cited by 6 publications

References 76 publications

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb2Se3/CdS Thin Film p–n Heterojunction

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb2Se3/CdS Thin Film p–n Heterojunction

Photoluminescence kinetics of CsPbBr3 nanocrystals with urea as co-ligand by using ultrafast spectroscopy

Characterization of sol gel derived spin coated copper incorporation of CdS films for nonlinear optical applications

Contact Info

Product

Resources

About

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction

Ultrafast Electron and Hole Transfer and Efficient Charge Separation in a Sb₂Se₃/CdS Thin Film p–n Heterojunction