Towards clean HSMG® graphene transfer

Graphene/III–V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer

“…7727-54-0) solution for 18 h. We chose APS because it is known to leave less residue during copper etching process compared to other etching solutions such as FeCl 3 , Fe(NO 3 ) 3 , CuSO 4 /HCl, H 2 O 2 /HCl. 31 The etching solution was refreshed in the process to facilitate the removal of Cu foil and to avoid reattachment of the remnants to the front graphene layer. The released PMMA/graphene film was transferred to a rinse bath (HCl:H 2 O 2 :deionized (DI) water, 20:1:1) 32 and was washed several times in DI water to eliminate residual etchants.…”

“…The Cu substrate was then etched away by immersing it in a 0.1 M ammonium peroxydisulfate (APS) (CAS no. 7727-54-0) solution for 18 h. We chose APS because it is known to leave less residue during copper etching process compared to other etching solutions such as FeCl 3 , Fe­(NO 3 ) 3 , CuSO 4 /HCl, H 2 O 2 /HCl . The etching solution was refreshed in the process to facilitate the removal of Cu foil and to avoid reattachment of the remnants to the front graphene layer.…”