2021
DOI: 10.1039/d1nr02272e
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Towards an ideal high-κ HfO2–ZrO2-based dielectric

Abstract: The existence of morphotropic phase boundary (MPB) inside HfO2-ZrO2 solid solution thin films has been predicted; if it exists, it provides up a new path toward an ideal silicon-compatible dielectric....

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Cited by 21 publications
(22 citation statements)
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“…[279] Indeed, a relatively large electronic bandgap E G combined with a high ε r gives elbow room to creative researchers toward the fabrication of ideal high-κ devices (Figure 3). [280][281][282][283] HfO 2 -based ultrathin films solved the scaling issues, and since 2007, INTEL group has practically used this material as a new high-κ for commercial production of the latest microprocessors. [279] To enhance the scaling ability of the emerging devices, improving the dielectric properties of HfO 2 -based thin film has always been on demand.…”
Section: Dielectric Propertiesmentioning
confidence: 99%
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“…[279] Indeed, a relatively large electronic bandgap E G combined with a high ε r gives elbow room to creative researchers toward the fabrication of ideal high-κ devices (Figure 3). [280][281][282][283] HfO 2 -based ultrathin films solved the scaling issues, and since 2007, INTEL group has practically used this material as a new high-κ for commercial production of the latest microprocessors. [279] To enhance the scaling ability of the emerging devices, improving the dielectric properties of HfO 2 -based thin film has always been on demand.…”
Section: Dielectric Propertiesmentioning
confidence: 99%
“…A novel approach based on the existence of morphotropic phase boundaries (MPB) was recently developed. [281,283,[292][293][294][295] This approach introduced a substantial improvement in the dielectric properties of HfO 2 -based thin films. In fact, the discovery of ferroelectricity and anti-ferroelectricity in HfO 2 -ZrO 2 (HZO) solid solution thin films [246][247][248][249][250][251][252][253][254][255][256][257][258][259][260][261][262] paved the way for enhancing dielectric properties through MPB, which will be discussed later in Section 8.…”
Section: Dielectric Propertiesmentioning
confidence: 99%
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