2014
DOI: 10.1039/c4nr02577f
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Towards a unified description of the charge transport mechanisms in conductive atomic force microscopy studies of semiconducting polymers

Abstract: In this work, conductive atomic force microscopy (C-AFM) is used to study the local electrical properties in thin films of self-organized fibrillate poly(3-hexylthiophene) (P3HT), as a reference polymer semiconductor. Depending on the geometrical confinement in the transport channel, the C-AFM current is shown to be governed either by the charge transport in the film or by the carrier injection at the tip-sample contact, leading to either bulk or local electrical characterization of the semiconducting polymer,… Show more

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Cited by 20 publications
(23 citation statements)
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“…However, it can be also seen that the 2% CuNPs blended membrane's surface has different pore shapes at different sizes. C‐AFM studies were used for the investigation of electrical conductance ability of copper blended membranes . C‐AFM images display surface conductivity of copper blended membranes.…”
Section: Resultsmentioning
confidence: 99%
“…However, it can be also seen that the 2% CuNPs blended membrane's surface has different pore shapes at different sizes. C‐AFM studies were used for the investigation of electrical conductance ability of copper blended membranes . C‐AFM images display surface conductivity of copper blended membranes.…”
Section: Resultsmentioning
confidence: 99%
“…pc‐AFM measurements provide insights of the OPVs nanoscale morphology and their local electrical properties simultaneously; further, from local current density ( J – V ) curves measurements the hole mobility through the film can be extracted, mobility value is an important parameter for charge transport because high values are desired in order to improve the OPV performance . These pc‐AFM determinations provide additional and complementary information to the STM analysis regarding nanoscale morphology and its correlation with the local PV performance . Device architecture was ITO/PEDOT:PSS (P VP AI 4083)/P3HT:[70]PCBM/PFN with a thickness of ≈40 nm for PEDOT:PSS, ≈100 nm for the active layer (area = 0.07 cm 2 ) and ≈5–10 nm for PFN (used as EEL) and, as top electrode, an AFM tip with gold conductive coating was used.…”
Section: Resultsmentioning
confidence: 99%
“…In this work, SMM is applied on poly(3-hexylthiophene-2,5-diy) (P3HT) [1]. P3HT remains a reference hole transporting a semiconducting polymer in OPV, as the combination of the relative stability, the nanostructural tunability [28] and the decreasing production costs of the material with the sufficient photovoltaic performances of the devices, make it a pertinent case-study for material validations later to be extended to more specific structures as foreseen in different industrial applications. As the sensitivity of SMM to the variations of electrical properties in P3HT is observed, the choice of experimental parameters and the mechanisms ruling the different S 11 signals recorded by the Keysight Power Network Analyzer (PNA) must be elucidated to reach meaningful properties of the materials under study.…”
Section: Of 11mentioning
confidence: 99%