Towards a Hybrid High Critical Temperature Superconductor Junction With a Semiconducting InAs Nanowire Barrier

Abstract

We investigate a new architecture for the implementation of Josephson junctions combining high critical temperature superconductors (HTS) and semiconductor (Sm) nanowires (NWs). The devices are obtained starting from pre-patterned YBaCuO (YBCO) electrodes and assembling suspended InAs-NWs bridges between nearby superconductive banks. Such a non-standard approach is necessary in the case of HTS since growth conditions for cuprates are incompatible with thermal stability of the Sm nanostructures. We investigate the device behavior as a function of the length L of the InAs bridge. For L > 200 nm, all junctions display a tendency to insulation at low temperatures. For L ∼ 200 nm, a metallic-like behavior is obtained, signaling the possible onset of a superconductive transition of the junction. Technological limitations on the width of the gap separating the YBCO banks currently prevent a further scaling. Our results suggest that a further reduction of the size of the trench between the YBCO electrodes can lead to functional YBCO/InAs-NWs/YBCO Josephson junctions

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…Во многих случаях для пассивации нанопроволок используются растворы сульфида аммония. Водные растворы сульфида аммония использовались, например, для пассивации нанопроволок GaAs [291,292], InGaAs/InP [178] и InAs [289,[293][294][295]. Отмечалось, правда, что при пассивации нанопроволок GaAs электронные свойства деградируют при выдержке на воздухе в течение нескольких дней [292].…”

Use of a spoof plasmon to optimize the coupling of infrared radiation to Josephson-junction fluxon oscillations

“…S denotes the bottom uniform and homogeneous superconductor electrode, while I stands for insulator of thickness d i and width w. SPP device based on the proposed layout (see Fig. 1) could be built using a top-down nanofab techniques that include steps of Electron Beam Lithography, dry and wet etching [37][38][39] for writing and then drilling the array of junctions for example, inside a N b/N bO x /N b or Al/AlO x /Al trilayer sample. We expect that the most relevant effect of the added periodic modulation of the electrode is a corresponding modulation of the Josephson critical current density j c .…”

What happens in Josephson junctions at high critical current densities

“…In this layout, the integration of the barrier with the superconducting components takes place at room temperature, after suitable surface treatments assembling optimally prebuilt blocks. The nanowire (NW) is suspended on the superconducting electrodes with Ti/Au contacts encapsulating the InAs-NW edges [19]. The curves relative to the Al-graphene (sheet)-Al JJ, reported in Fig.…”