Towards a circuit theory for metallic single‐electron tunnelling devices

Hoekstra, Jaap

doi:10.1002/cta.412

Cited by 15 publications

(7 citation statements)

References 27 publications

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“…Equation (40) is generally accepted in theories on singleelectron tunneling [19]- [23]. By making an analogy between nanoelectronics and the dissipating ideal switch, a possible physical interpretation can be investigated.…”

Section: Similarities Between Single-electron Electronics and Thmentioning

confidence: 99%

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

Hoekstra

2020

IEEE Open J. Circuits Syst.

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The purpose of this paper is to investigate the two-capacitor paradox using circuit models developed in the analysis of circuits that include nanoelectronic single-electron tunneling devices. The two-capacitor paradox, in which it seems that energy is not conserved in a simple circuit consisting of two capacitors in parallel separated by an ideal switch, is resolved by applying linear circuit theory utilizing a current-described by a (Dirac) delta function-and stepping voltages across all three elements. Based on a similar description, successfully used for tunneling of electrons through metal junctions in nanoelectronics, the switch is modeled as a device across which-upon closing-the voltage steps down while the current through it is an impulse. The model distinguishes three intervals in describing the ideal switch: t < 0, t = 0, and t > 0. As a consequence, the ideal switch dissipates energy during the switching action at t = 0 in zero time. Although the solution of the two-capacitor problem looks like a theoretical curiosity, the application of nanoelectronic concepts allow a physical explanation based on electron tunneling; it shows that the ideal switch is best described by the tunneling of many electrons. In such a context, some of those electrons loose energy and the v-i characteristic shows Ohm's law.INDEX TERMS Two-capacitor problem, two-capacitor paradox, energy paradox, energy dissipation, circuit theory, nanoelectronics, single-electron tunneling, (Dirac) delta function, ideal switch, unbounded current.This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ VOLUME 1, 2020 13

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Section: Similarities Between Single-electron Electronics and Thmentioning

confidence: 99%

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

Hoekstra

2020

IEEE Open J. Circuits Syst.

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“…The equivalent circuit in this example is shown in Figure 18. Regarding equations (4,7), the master equation is given by:…”

Section: Irreversible Sebmentioning

confidence: 99%

“…In addition, investigation on the compound circuits, which include SEDs and other circuit elements such as inductors, current sources, and MOS transistors, cannot be performed using these simulators. A great deal of work has also been done on the simulation of single-electron circuits using SPICE models [7][8][9][10][11][12][13][14]. The main problem of the introduced circuit models is that they are limited to low frequencies and low temperatures.…”

Section: Introductionmentioning

confidence: 99%

A general SPICE compatible circuit model for single‐electron devices and application to bit‐error‐rate calculations

Sharifi

Jamshidnezhad

2013

Circuit Theory & Apps

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The main purpose of this paper is study of the single‐electron devices (SEDs) behavior, having metal islands, in the time domain. On this basis, some new conceptions, such as division of islands in independent type and dependent type and introduction of multi‐dimensional state space for a SED, have been presented. Then, a new circuit model is introduced for SEDs in general N‐dimensional case. This model is based on the orthodox theory and the solution of the time‐dependent master equation with the capability of installation in the HSPICE software. Hence, one can simulate behavior of the compound circuits including SEDs and other circuit elements by help of this model. Another interesting characteristic of the introduced circuit model is the possibility of using it in calculation of bit error rate in single‐electron logical gates considering both the time and the temperature effects. The behavior of various SEDs in low frequencies is studied, and the results are compared with the results of SIMON, often used as a reference. Furthermore, the time‐dependent results of these devices in high frequencies are calculated and compared with the analytic results for step inputs. These comparisons indicate accuracy and validity of the model. Finally, the model is used for simulating time‐dependent behavior of some single‐electron logic gates, and their total error rate are calculated. Copyright © 2013 John Wiley & Sons, Ltd.

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“…with the Coulomb blockade [45,46]. SET circuits have been suggested, and methods to design SET circuits have been developed [47,48]. Tunneling combined with Coulomb force interactions provided the framework for the first field-coupled integrated circuit concept, the quantum cellular automata (QCA) as well [49].…”

Section: Tunneling and Light Emitting In M-i-m Structuresmentioning

confidence: 99%

On circuit models for quantum‐classical networks

Csurgay

2007

Circuit Theory & Apps

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SUMMARYPhysics is not scale invariant, and today the scale of atoms and molecules challenges designers of machines in which quantum effects have dominant sway. What role could circuit theory play in designing machines described by quantum-classical models? Classical equivalent circuits do exist for systems composed of metal contacted and wired devices, such as resonant tunneling diodes, single electron transistors, metalinsulator-metal diodes, etc. circuits, but not for quantum-entangled networks, such as multi-quantum-state atoms.If devices were not contacted and wired by macroscopic metals, i.e. devices were classically field coupled, then generalized circuit models can be introduced. Case studies have been presented on the role of circuit models in quantum-classical systems. However, there are no ideal circuit elements capable of capturing the port properties of quantum-mechanical and/or quantum-optical subsystems and their coupling to classical waveguides or cavities.

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Towards a circuit theory for metallic single‐electron tunnelling devices

Cited by 15 publications

References 27 publications

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

A general SPICE compatible circuit model for single‐electron devices and application to bit‐error‐rate calculations

On circuit models for quantum‐classical networks

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