Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition

Huang, Ruomeng; Kissling, Gabriela P.; Kashtiban, Reza J.; Noori, Yasir; Cicvarić, Katarina; Zhang, Wenjian; Hector, Andrew L.; Beanland, Richard; Smith, David C.; Reid, Gillian; Bartlett, Philip N.; Groot, C.H. de

doi:10.1039/c8fd00126j

Cited by 15 publications

(24 citation statements)

References 31 publications

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“…[ 13 ] It can hence be utilized to deposit materials over 3D surfaces including patterned nanostructures of high aspect ratios. [ 14–17 ] In addition, electrodeposition is usually performed at room temperature, avoiding harsh environments such as plasma or extremely high temperatures, which can damage pre‐existing materials on the substrate, such as graphene electrodes. [ 7 ]…”

Section: Introductionmentioning

confidence: 99%

Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Abdelazim

Noori

Thomas

et al. 2021

Adv Elect Materials

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Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20‐fold. Electronic and photo‐response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site‐selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials‐based fabricated devices.

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Section: Introductionmentioning

confidence: 99%

Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Abdelazim

Noori

Thomas

et al. 2021

Adv Elect Materials

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“…Electrodeposition in nonaqueous solvents using a three-electrode electrodeposition setup is an alternative to overcome these limitations. 24,[38][39][40] A commercially available precursor for electrodeposition is [NH4]2[MoS4]. However, this precursor is not compatible with non-aqueous solvents such as dichloromethane (CH2Cl2) or acetonitrile (CH3CN).…”

Section: Introductionmentioning

confidence: 99%

Large-Area Electrodeposition of Few-Layer MoS₂ on Graphene for 2D Material Heterostructures

Noori

Thomas

Ramadan

et al. 2020

ACS Appl. Mater. Interfaces

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Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via non-aqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photo-induced current through the film. These results pave the way towards developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.

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“…By referring to this method, the fitting of MOSFET parameters under other processes can be realized. The HRS and LRS of the eNVM device used in the simulation are the typical expected values of GeSbTe-type PCRAM [34,35], and the resistance values of other eNVM devices can be set when needed. It should be noted that the proposed method can only analyze 1T1R crossbar arrays under steady state, and dynamic analysis is beyond the scope of this paper.…”

Section: Conclusion and Discussionmentioning

confidence: 99%

Transfer Modeling for 1T1R Crossbar Arrays with Line Resistances

Zhang¹,

Zeng²

2021

Preprint

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Progress of neuromorphic computing and next-generation information storage technologies hinges on the development of emerging nonvolatile memory (eNVM) devices, which are typically organized employing the crossbar array architecture. To facilitate quantitative performance analysis of eNVM crossbar array architecture, this paper proposes a way to study the one-transistor-one-resistor (1T1R, R: eNVM devices) crossbar arrays based on matrix algebra method. The comparative analysis of 1T1R crossbar array modeling based on matrix algebra method and compact-model SPICE simulations verifies the accuracy of the proposed method, which can be directly used for static quantitative analysis and evaluation of 1T1R crossbar array performance. With the proposed method, the optimization of array operation schemes and current backflow issue are discussed. Our analysis indicates that the proposed method is capable of flexibly adjusting array parameters and consider the influence of line resistance on array operation, and can provide guidance for improving the sensing margin of the array through multi-parameter co-simulation. The proposed matrix algebra-based 1T1R crossbar array modeling method can bridge the gap between the accuracy and flexibility of the available methods.

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Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition

Abstract: The design and fabrication of a 2D passive phase change memory matrix by non-aqueous electrodeposition of confined Ge–Sb–Te cells.

Cited by 15 publications

References 31 publications

Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Large-Area Electrodeposition of Few-Layer MoS₂ on Graphene for 2D Material Heterostructures

Transfer Modeling for 1T1R Crossbar Arrays with Line Resistances

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Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition

Abstract: The design and fabrication of a 2D passive phase change memory matrix by non-aqueous electrodeposition of confined Ge–Sb–Te cells.

Cited by 15 publications

References 31 publications

Lateral Growth of MoS2 2D Material Semiconductors Over an Insulator Via Electrodeposition

Lateral Growth of MoS2 2D Material Semiconductors Over an Insulator Via Electrodeposition

Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures

Transfer Modeling for 1T1R Crossbar Arrays with Line Resistances

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Product

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Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Lateral Growth of MoS₂ 2D Material Semiconductors Over an Insulator Via Electrodeposition

Large-Area Electrodeposition of Few-Layer MoS₂ on Graphene for 2D Material Heterostructures