Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Ogudo, Kingsley A.; Snyman, Lukas W.; Poulleux, Jean-Luc; Viana, Carlos; Tegegne, Zerihun Gedeb; Schmieder, Diethelm

doi:10.1117/12.2038079

Cited by 10 publications

(7 citation statements)

References 52 publications

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“…Several new results are presented, especially for the vertical pillar like structures, as previously reported in Ref. 28. Particularly, we present more detail about the direct current (DC) and RF coupling results that have been observed for the structures.…”

Section: Introductionsupporting

confidence: 56%

“…Only a brief review is hence presented here. 27,28 Figure 1 shows some conceptual aspects of our latest waveguide design strategies, utilizing the 0.35-μm Si Ge RF bipolar process. In a first design (waveguide design 1), as in Fig.…”

Section: Utilization Of Si Amleds As Optical Sources In the Optical L...mentioning

confidence: 99%

“…An overview paper of our achievements with regards to realizing first iteration complete optical link structures operating utilizing Si Ge bipolar technology in the 450-to 850-nm band was published in SPIE Optical Proceedings of 2014. 28 We, in overview, highlighted the design of the optical link structures, utilizing the SiGe 0.35-μm processing technology. However, we observed high losses, presumably caused by means of weak aligning of optical source to waveguide and from waveguide to detector structures.…”

Section: Introductionmentioning

confidence: 99%

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Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

et al. 2022

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A series of on-chip optical links of 50-μm length, utilizing 650 to 850 nm propagation wavelength, with Si avalanche-mode optical sources, silicon nitride-based waveguides, and Si Ge detectors, have been designed and realized, with a 0.35-μm SiGe radio frequency bipolar integrated circuit process. The optical coupling between the optical source and the detectors was realized by a set of dedicated designed optical waveguides, which were all fabricated with components of the SiGe radio frequency process. All components were fully integrated on the same silicon chip. The Si avalanche-mode light-emitting diodes (Si AMLEDs) emitted in the 650-to 850-nm wavelength regime. Correspondingly, small microdimensioned detectors utilize SiGe detector technology with detection efficiencies of up to 0.85 in the same wavelength regime and with a transition frequency of up to 20 GHz. Best performances for the optical links as realized show optical coupling of up to 5 GHz with a total optical link budget loss of −40 dB. A set of link results are presented and several interpretations are given on current realizations. The technology is particularly suitable for realization of low-cost on-chip optical signal processing, optical interconnects, and various types of on-chip microsensors.

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Section: Introductionsupporting

confidence: 56%

Section: Utilization Of Si Amleds As Optical Sources In the Optical L...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

et al. 2022

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“…In waveguide structures, light is guided in the plane of the thin film, facilitating the integration of such a sensor, along with source and detector components, into a single integrated chip device [37]. This is a significant advantage in the development of on-chip micro-and nano-optical biosensors.…”

Section: Waveguide Structuresmentioning

confidence: 99%

Nanomaterial-Enhanced Receptor Technology for Silicon On-Chip Biosensing Application

Okhai¹,

Idris²,

Feleni³

et al. 2021

Biosensors - Current and Novel Strategies for Biosensing

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Nanomaterials integration in biosensors designs are known to enhance sensing and signaling capabilities by exhibiting remarkably high surface area enhancement and intrinsic reactivity owing to their distinctive optical, chemical, electrical and catalytic properties. We present the synthesis and characterization of silver nanoparticles (AgNPs), and their immobilization on a silicon on-chip biosensor platform to enhance sensing capability for prostate specific antigen (PSA) - cancer biomarkers. Several techniques, including UV-Visible (UV-Vis) absorption spectrum, Fourier transforms infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and field emission scanning electron microscopy (FESEM) were used for characterizing the AgNPs. The biochemical sensor consists of AgNPs immobilized on the receptor layer of a silicon avalanche mode light emitting device (Si AM LED) which enables on-chip optical detection biological analytes. A bio-interaction layer etched from the chip interacts with the evanescent field of a micro dimensioned waveguide. An array of detectors below the receptor cavity selectively monitor reflected light in the UV, visible, infrared and far infrared wavelength regions. AgNPs used as an immobilization layer in the receptor layer enhances selective absorption analytes, causing a change in detection signal as a function of propagation wavelength as light is dispersed. The analytes could range from gases to cancer biomarkers like prostate specific antigen.

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“…При этом ими теоретически показана возможность достижения длительности импульса 7 пс. В работе [16] ученых из ЮАР и Франции теоретически прогнозируется работа лавинных светодиодов на частоте 300 ГГц.…”

Section: Introductionunclassified

Avalanche leds based on nanostructured silicon for optical interconnections

Ви

Leshok

Долбик

et al. 2020

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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Белорусский государственный университет информатики и радиоэлектроники, (г. Минск, Республика Беларусь) Поступила в редакцию 17 марта 2020 © Белорусский государственный университет информатики и радиоэлектроники, 2020 Аннотация. В работе проведен анализ параметров кремниевых лавинных светодиодов и их использования для электронно-оптических систем передачи сигналов. Показаны преимущества данных приборов, среди которых следует выделить высокое быстродействие и совместимость с кремниевой технологией. Изготовлены экспериментальные образцы лавинных светодиодов на основе наноструктурированного кремния и исследованы их структурные и оптические характеристики. Представлены результаты управления спектром электролюминесценции лавинных светодиодов за счет выбора технологических режимов формирования наноструктурированного кремния. Установлено, что температура подложки в процессе осаждения поверхностной нанокомпозитной пленки алюминий + кремний влияет на размеры формирующихся кремниевых наночастиц, определяющих спектральные характеристики лавинных светодиодов. Это позволяет смещать максимум спектра их излучения в более коротковолновую область видимого диапазона за счет формирования кремниевых наночастиц меньших размеров. Разработана система оптических межсоединений, состоящая из лавинных светодиодов на основе наноструктурированного кремния и микроканальной кремниевой пластины, используемой для передачи светового сигнала. Проведено исследование различных режимов функционирования разработанной оптоэлектронной системы и достигнуто увеличение эффективности оптопары на основе лавинных светодиодов до 0,2 % за счет импульсного режима функционирования. Показано, что эффективность оптопары увеличивается при увеличении тока светодиода, и именно импульсный режим его работы характеризуется максимальным значением тока, что обусловлено более эффективным отводом джоулевого тепла в промежутках между импульсами, обеспечивающим стабильную работу всей системы. Полученные результаты открывают новые возможности для развития оптических межсоединений между кремниевыми чипами и кремниевой оптоэлектроники в целом. Ключевые слова: лавинные светодиоды, наноструктурированный кремний, электролюминесценция, оптопара, оптические межсоединения. Конфликт интересов. Авторы заявляют об отсутствии конфликта интересов.

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Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Cited by 10 publications

References 52 publications

Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength

Nanomaterial-Enhanced Receptor Technology for Silicon On-Chip Biosensing Application

Avalanche leds based on nanostructured silicon for optical interconnections

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