Toward traceability for at-line AFM dimensional metrology

Dixson, Ronald G.; Guerry, Angela; Bennett, Marylyn Hoy; Vorburger, Theodore V.; Postek, Michael T.

doi:10.1117/12.473471

Cited by 20 publications

(32 citation statements)

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“…The general uncertainty budgets for pitch and height have been previously discussed in detail. 1 The most significant change since that publication was the improvement of the scale calibration term in the height uncertainty budget. It was reduced from 0.5 % to 0.3 % of the measured height.…”

Section: Uncertainty Budgetsmentioning

confidence: 98%

“…Except for the tip correction term, most of the terms are equivalent to terms from the pitch budget that has been previously described. 1 Therefore, the only term we will discuss here is the tip width correction.…”

Section: Uncertainty Budget For Linewidth Measurementsmentioning

confidence: 99%

“…Some of these strategies were discussed in a previous description of this project. 1 Initially, we used the most expedient approach with the SXM to lay the foundation for the RMS project. For example, we are using a step height standard which was measured at NIST using calibrated stylus profilers.…”

Section: Traceability and Uncertainty Budgetsmentioning

confidence: 99%

“…As we have previously described, this tool has been implemented as a Reference Measurement System (RMS) in the facilities at ISMT. 1 However, it is currently being replaced by a next-generation CD-AFM tool. Using the current tool, we have performed measurements needed to establish the traceability chain and developed uncertainty budgets.…”

Section: Introductionmentioning

confidence: 99%

“…Comments on these two perspectives were also included in our previous description of the RMS project. 1 We use both approaches as appropriate for our specific goals.…”

Section: Introductionmentioning

confidence: 99%

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Implementation of Reference Measurement System using CD-AFM

Dixson

Guerry²,

Bennett³

et al. 2003

SPIE Proceedings

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International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of technological change in the semiconductor industry makes the timely introduction of relevant standards challenging. As a result, the link between the realization of the SI (Systeme International d'Unites, or International System of Units) unit of length -the meter -and measurements on the fab line is not always maintained. To improve this situation, we are using an at-line critical dimension-AFM (CD-AFM) at ISMT as a developmental platform. This tool has been implemented as a Reference Measurement System (RMS) in the facilities at ISMT. However, it is currently being replaced by a next-generation CD-AFM tool. Using the current tool, we have performed measurements needed to establish the traceability chain and developed uncertainty budgets. Specifically, we have developed uncertainty budgets for pitch, height, and critical dimension (CD) measurements. Some evaluations were performed using samples for which a full traceability chain is not available. We expect to improve the uncertainties further for such samples. At present, the standard uncertainties are estimated to be approximately 0.2 % for pitch measurements, 0.4 % for step height measurements, and 5 nm for CD measurements in the sub-micrometer range. Similar budgets will be developed for the new tool once it is installed. We will describe our methodology for RMS implementation and the major applications for which it has been used. These include measurements on new NIST/ISMT linewidth standards, a reference tool for CD-scanning electron microscopes (SEMs), metrology on photo-masks, CD-SEM benchmarking, and 193 nm resist shrinkage measurements.

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Section: Uncertainty Budgetsmentioning

confidence: 98%

Section: Uncertainty Budget For Linewidth Measurementsmentioning

confidence: 99%

Section: Traceability and Uncertainty Budgetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Comments on these two perspectives were also included in our previous description of the RMS project. 1 We use both approaches as appropriate for our specific goals.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Implementation of Reference Measurement System using CD-AFM

Dixson

Guerry²,

Bennett³

et al. 2003

SPIE Proceedings

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Model‐based CD–SEM metrology at low and ultralow landing energies: implementation and results for advanced IC manufacturing

Gorelikov¹,

Sullivan²,

Davidson³

2005

Surface & Interface Analysis

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Critical Shape Metrology (CSM), a Critical Dimension Scanning Electron Microscope (CD-SEM)-basedtechnique that extracts accurate feature shape information from images obtained during routine in-line wafer inspection as a means of minimizing measurement bias, is described and explored experimentally. CSM uses intensity profiles from CD-SEM images of known materials that are compared in real time to profiles contained in an off-line generated Monte Carlo SEM simulation library. The library of intensity waveforms spans the range of expected geometric feature shapes and material compositions. Extensive comparison of CSM results to accepted reference measurement system measurements using Critical Dimension Atomic Force Microscopes, cross-sectional SEMs and Focused Ion Beams are made. Agreement of the CSM method to each of these is shown to be better than 1% or within experimental uncertainty and significantly better agreement than traditional CD metrology algorithms.

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Advanced metrology needs for nanoelectronics lithography

Knight

Dixson

Jones

et al. 2006

Comptes Rendus. Physique

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The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features, significant advances have also been required to measure the printed features. In this article we will discuss the current state of the art in the metrology for measuring critical dimensions of printed features for scanning electron microscopy and atomic force microscopy, and describe work at the National Institute of Standards and Technology advancing these tools as well as exploratory work on two new promising techniques, scatterfield microscopy and small angle X-ray scattering. Line width roughness critical dimension and overlay metrology and control are two of the most significant industry needs mentioned in the International Technology Roadmap for Semiconductors (2005) . To cite this article: S. Knight et al., C. R. Physique 7 (2006).Published by Elsevier Masson SAS on behalf of Académie des sciences.

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Toward traceability for at-line AFM dimensional metrology

Cited by 20 publications

References 0 publications

Implementation of Reference Measurement System using CD-AFM

Implementation of Reference Measurement System using CD-AFM

Model‐based CD–SEM metrology at low and ultralow landing energies: implementation and results for advanced IC manufacturing

Advanced metrology needs for nanoelectronics lithography

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