Toward realization of high-throughput hyperspectral imaging technique for semiconductor device metrology

Yoon, Changhyeong; Park, Gwangsik; Han, Daehoon; Im, Sangil; Jo, Sungmin; Kim, Jinseob; Kim, Wookrae; Choi, Chang-Hoon; Lee, Myungjun

doi:10.1117/1.jmm.21.2.021209

Cited by 11 publications

(11 citation statements)

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“…Conventional overlay metrology encounters limitations in resolution, throughput, and accuracy, leading researchers and engineers to develop new metrology solutions. To address the limitations of conventional overlay metrology, several novel approaches have been proposed, such line-scanning hyper spectral imaging [5], self-interferometric pupil ellipsometry [6] and the use of microsphere for nano-spot spectroscopy [7] One promising technique is Mueller matrix spectroscopic ellipsometry (MMSE) [8], a type of spectroscopic ellipsometry (SE) that measures the Mueller matrix, which contains information about the polarization state changes that occur when light interacts with the sample. MMSE is particularly effective for overlay error metrology because it provides more information including the anisotropy (e.g., circular birefringence and circular dichroism) of the sample.…”

Section: Introductionmentioning

confidence: 99%

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

Son

Hwang

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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In recent years, the overlay specifications of advanced semiconductor devices have become extremely stringent. This challenging situation becomes severe for every new generation of the device development. However, conventional overlay metrology systems have limited throughput due to their point-based nature. Here, we first demonstrate the novel imaging Mueller-matrix spectroscopic ellipsometry (MMSE) technique, which can measure the overlay error of all cell blocks on a device wafer with extremely high throughput, much faster than conventional point-based spectroscopic ellipsometry (SE) technologies. It provides the super large field of view (FOV) ~ 20 × 20 mm2 together with high sensitivity based on Mueller information, which will be truly innovated solution not only for the overlay metrology, but also for critical dimension (CD) measurement, eventually maximizing process control and productivity of advanced node.

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Section: Introductionmentioning

confidence: 99%

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

Son

Hwang

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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“…Due to the recent dimension shrink of semiconductor device and increase of manufacturing process complexity, however, conventional SE techniques have difficulties in semiconductor metrology field. Recently, new metrology techniques have been studied in order to overcome the limitations, such as line scan method employed hyperspectral imaging [5], pupil ellipsometry with self-interferometry [6], and nano-spot spectroscopy using microsphere [7]. Mueller matrix spectroscopic ellipsometry (MMSE) is one of the promising solution since Mueller matrix (MM) contains the information of polarization states changes after the interaction between light and matters in each matrix components, which implies the complex 3D structures of the patterns on the semiconductor wafer [8].…”

Section: Introductionmentioning

confidence: 99%

Wide-field massive CD metrology based on the imaging Mueller-matrix ellipsometry for semiconductor devices

Son

Hwang

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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In this paper, we propose an unique metrology technique for the measurement of three-dimensional (3D) nanoscale structures of semiconductor devices, employing imaging-based massive Mueller-matrix spectroscopic ellipsometry (MMSE) with ultra-wide field of view (FOV) of 20×20 mm2. The proposed system enables rapid measurement of 10 million critical dimension (CD) values from all pixels in the image, while the conventional point-based metrology technique only measures a single CD value. We obtain Mueller matrix (MM) spectrum by manipulating wavelength and polarization states using a custom designed optical setup, and show that the proposed method characterizes complex 3D structures of the semiconductor device. We experimentally demonstrate CD measurement performance and consistency in the extremely large FOV, and suggest that the combination of MMSE and massive measurement capability can provide valuable insights: fingerprints originated from the manufacturing process, which are not easily obtained with conventional techniques.

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“…The high-throughput metrology is crucial to monitor the uniformity of critical dimension (CD) in semiconductor manufacturing. [1][2][3] The scatterometry, which is called optical critical dimension (OCD), has issues such as large spot size (tens of μm) and low measurement speed. Hence Yoon et al in Samsung Electronics proposed the line-scan hyperspectral imaging (LSHI) in 2022.…”

Section: Introductionmentioning

confidence: 99%

“…Hence Yoon et al in Samsung Electronics proposed the line-scan hyperspectral imaging (LSHI) in 2022. 1 The LSHI is superior to OCD including throughput, field of view, spatial and spectral resolution. The OCD is the point detection with whiskbroom, and the LSHI is the line scan with pushbroom.…”

Section: Introductionmentioning

confidence: 99%

“…The FOV of the OCD is around 25 x 30 μm 2 , and that of the LSHI is the slit length (millimeter scale) multiplied by scan speed. 1 Therefore, the FOV and throughput of the LSHI is much higher than that of the OCD. The spatial resolution of the LSHI is 10-18 μm in this study, and it is better than that of OCD, which is the same as field of view.…”

Section: Introductionmentioning

confidence: 99%

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Optical design of refractive imaging spectrometer for semiconductor metrology

Peng¹,

Chen²,

Lee³

2023

Optical Measurement Systems for Industrial Inspection XIII

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Critical dimension (CD) uniformity has recently become increasing essential with miniaturization in semiconductor production. For high-volume manufacturing, high-speed in-wafer uniformity inspection is inevitable. The conventional optical critical dimension (OCD) spectroscopy has low resolution issue because of the large spot size. Consequently, line-scan hyperspectral imaging (LSHI) is presented by Samsung Electronics in 2022. Compared with the OCD, the LSHI has advantages of high throughput, high spatial and spectral resolution, and large field of view. The LSHI can improve the throughput of OCD significantly and provide high-resolution spatial and spectral information. In this study, the optical design of the refractive imaging spectrometer based on the ruled reflection grating is presented. Most imaging spectrometers, such as Czerny-Turner or Ebert-Fastie setup, are off-axis reflective configuration. However, the performance is limited by serious astigmatism and smaller numerical aperture. The astigmatism leads to low spatial and spectral resolution, and the smaller numerical aperture requires more exposure time, which results in low throughput. Therefore, the refractive type using lens combinations for imaging spectrometers can eliminate aberrations effectively and increase numerical aperture significantly. In this study, the numerical aperture is designed as f/2.4, and the slit length is 14 mm for high throughput. The high spatial and spectral resolution is accomplished by optimizing lens combinations from 400 nm to 800 nm spectral region.

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Toward realization of high-throughput hyperspectral imaging technique for semiconductor device metrology

Cited by 11 publications

References 0 publications

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

Massive overlay metrology solution by realizing imaging Mueller matrix spectroscopic ellipsometry

Wide-field massive CD metrology based on the imaging Mueller-matrix ellipsometry for semiconductor devices

Optical design of refractive imaging spectrometer for semiconductor metrology

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