2018
DOI: 10.1021/jacs.8b07879
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Toward Intrinsic Room-Temperature Ferromagnetism in Two-Dimensional Semiconductors

Abstract: Two-dimensional (2D) ferromagnetic semiconductors have been recognized as the cornerstone for next-generation electric devices, but the development is highly limited by the weak ferromagnetic coupling and low Curie temperature ( T). Here, we reported a general mechanism which can significantly enhance the ferromagnetic coupling in 2D semiconductors without introducing carriers. On the basis of a double-orbital model, we revealed that the superexchange-driven ferromagnetism is closely related to the virtual exc… Show more

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Cited by 299 publications
(250 citation statements)
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“…The ongoing research on emerging 2D ferromagnetic materials mainly follows two directions: (i) the pursuit of high‐performance vdW ferromagnets and (ii) the application of experimentally known vdW ferromagnets . The former aims to pursue new vdW ferromagnetic materials possessing superior properties, such as high‐mobility ferromagnetic semiconductors, half metals with large spin gaps, and robust ferromagnets with high Curie temperature . The latter focuses on the rational control of atom‐thick vdW ferromagnets to accomplish better performance in nanodevices, among which electrical control, via electric field and electrostatic doping, has been verified to be an effective strategy to modulate atomically thin vdW ferromagnets .…”
Section: Introductionmentioning
confidence: 99%
“…The ongoing research on emerging 2D ferromagnetic materials mainly follows two directions: (i) the pursuit of high‐performance vdW ferromagnets and (ii) the application of experimentally known vdW ferromagnets . The former aims to pursue new vdW ferromagnetic materials possessing superior properties, such as high‐mobility ferromagnetic semiconductors, half metals with large spin gaps, and robust ferromagnets with high Curie temperature . The latter focuses on the rational control of atom‐thick vdW ferromagnets to accomplish better performance in nanodevices, among which electrical control, via electric field and electrostatic doping, has been verified to be an effective strategy to modulate atomically thin vdW ferromagnets .…”
Section: Introductionmentioning
confidence: 99%
“…However, the harmonic and mean-field approximations in the spin-wave Hamiltonian and the corresponding magnetization introduce extra error bars. A few Monte Carlo (MC) simulations predicted Tc in a range between 50K and 96K, depending on their parameters and Hamiltonians [26,27]. Importantly, recent studies [28][29][30] not only show the reliability of MC simulations comparing with the random phase approximation, and further reveal direct relations between Tc and corresponding magnetic interaction strengths.…”
Section: Introductionmentioning
confidence: 99%
“…Based on Monte Carlo (MC) simulations, 43 the T c of Cs 4 FePb 2 Cl 12 is estimated to be 442 K (Fig. 5d), which is well above RT and among the highest T c of intrinsic HMFs reported in the literatures.…”
Section: Origin Of Fm Ground-state In Cs 4 Fepb 2 CL 12mentioning
confidence: 89%