Toward a more environmentally benign synthesis of doped barium titanate

Abstract

Barium titanate is one of the most thoroughly studied members of the perovskite family due to its prominent place in the electroceramic industry. To be used as a capacitor at room temperature, a high-dielectric constant is needed which is achieved through doping. The focus of this research was to develop a more environmentally benign alternative to the doping of barium titanate. The barium source was barium titanyl catecholate, Ba[Ti(cat) 3 ] (aq) and the doping sources were strontium oxalate (SrC 2 O 4 ) and strontium carbonate (SrCO 3 ). The doping strategies included a solid-state synthetic pathway as well as microwave-and centrifuge-assisted methods which both employed water as the only solvent. The last two benign by design methods were tested with respect to their thermodynamic control over barium-to-strontium stoichiometric ratios. These methods of doping proved to be more environmentally friendly and economical while combining green chemistry and materials science.

Bis(catecholato-κ2 O,O′)bis(dimethyl sulfoxide-κO)titanium(IV)

“…Titanium catecholate complexes have found various uses: Titanium triscatecholate complexes of the alkaline earth metals were utilized as molecular precursors to a number of M II TiO 6 -type perovskites (Ali & Milne, 1987;Marteel-Parrish et al, 2008). Titanium catecholates have been exploited as catalysts in acetylene hydrogenation (Bazhenova et al, 2016) while three-dimensional titanium catecholate frameworks of high proton conductivity (Nguyen et al, 2015) and titanium catecholate-based MOFs have been described (Cao et al, 2020).…”

Analyzing the atomic pair distribution function of BMT-based nanopowders via X-ray diffraction

“…Lead-free and barium-based nanomaterials with a perovskite structure have been extensively researched due to their advanced ferroelectric and piezoelectric properties [1][2][3]. These ceramics possess remarkable dielectric properties, making them ideal for multi-layer ceramic manufacturing [4]. Additionally, their wide band gap of 3.3 eV to 3.8 eV has increased their attractiveness in electronic device fabrication [5,6].…”