Toward a fully integrated 2.4 GHz differential pair class-E power amplifier using on-chip RF power transformers for Bluetooth systems

Issa, Abbas H.; Ghayyib, Sarab M.; Ezzulddin, Ahmed S.

doi:10.1016/j.aeue.2014.08.010

Cited by 10 publications

(5 citation statements)

References 7 publications

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“…As maximization of the output power is critical for PAs, strategies have been developed to address this need. In one study, a fully integrated 2.4 GHz differential pair class-E power amplifier for Bluetooth applications using on-chip power transformers for signal conversion and load transformation based on standard 0.13 µm CMOS process was demonstrated [5]. Owing to the low voltage specifications of CMOS devices, the overall design was divided into two identical parallel branches of differential amplifiers to decrease the voltage stress on active devices without compromising on the output power.…”

Section: Applications Of On-chip Transformersmentioning

confidence: 99%

“…At the output stage, a similar transformer configuration was used to recombine the amplified signals coming out of the two amplifier branches. This approach provided high output power with power gain of 17.83 dB at 2.4 GHz for 1 V supply [5].…”

Section: Applications Of On-chip Transformersmentioning

confidence: 99%

“…With newly emerging wireless communication demands, such as 5G, the realization of fully integrated systems with on-chip components is critical to reduce production costs and overall device size. Along these lines, the integration of many passive devices like inductors, capacitors and transformers is very important, since they serve as the fundamental building blocks of many RF integrated circuits (RFICs) and their performance largely affects the overall circuit specifications [1,2,3,4,5,6,7,8]. Fortunately, the evolution of microelectronic process technologies has allowed, to a large extent, the fabrication of active and passive components on the same chip.…”

Section: Introductionmentioning

confidence: 99%

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Integrated On-Chip Transformers: Recent Progress in the Design, Layout, Modeling and Fabrication

Bajwa

Yapıcı

2019

Sensors

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On-chip transformers are considered to be the primary components in many RF wireless applications. This paper provides an in-depth review of on-chip transformers, starting with a presentation on the various equivalent circuit models to represent transformer behavior and characterize their performance. Next, a comparative study on the different design and layout strategies is provided, and the fabrication techniques for on-chip implementation of transformers are discussed. The critical performance parameters to characterize on-chip transformers, such as the Q-factor, coupling factor (k), resonance frequency (fSR), and others, are discussed with reference to trade-offs in silicon chip real-estate. The performance parameters and area requirements for different types of on-chip transformers are summarized in tabular form and compared. Several techniques for performance enhancement of on-chip transformers, including the different types of micromachining and integration approaches stemming from MEMS (microelectromechanical systems) technologies are also analyzed. Lastly, the different uses and applications of on-chip transformers are discussed to highlight the evolution of on-chip transformer technology over the recent years and provide directions for future work in this field.

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Section: Applications Of On-chip Transformersmentioning

confidence: 99%

Section: Applications Of On-chip Transformersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integrated On-Chip Transformers: Recent Progress in the Design, Layout, Modeling and Fabrication

Bajwa

Yapıcı

2019

Sensors

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“…The CMOS power amplifier (PA) is a promising solution for modern wireless devices to satisfy the demand of a low-power and low-cost design. Over the years, CMOS PA has been widely used in various wireless communication applications, including home automation, Radio Frequency Identification (RFID), industrial consumer electronics, TV transmissions, phones, and medical instruments [8][9][10]. It has been integrated in high-frequency medical ultrasonic applications to amplify high-voltage excitation signals to activate ultrasonic transducers, because ultrasonic imaging requires a higher contrast resolution, which can be produced by a highly linear PA [4].…”

Section: Introductionmentioning

confidence: 99%

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

et al. 2019

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Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency (RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to the required output power. The signal is amplified to make it sufficiently high for the transmitter to propagate the required distance to the receiver. Attempted advancements of PA have focused on attaining high-performance RF signals for transmitters. Such PAs are expected to require low power consumption while producing a relatively high output power with a high efficiency. However, current PA designs in nanometer and micrometer complementary metal–oxide semiconductor (CMOS) technology present inevitable drawbacks, such as oxide breakdown and hot electron effect. A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and medical) band applications.

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“…The primary and secondary metal windings of the stacked transformers are laid on top of each other on the silicon substrate, i.e., the two windings are stacked one above the other [12,13]. Here, the vertical coupling of the magnetic field between the primary and secondary winding dominates over the edge coupling between the windings [14]. The top view and side view of a stacked transformer is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Stacked Transformer: Influence of the Geometrical and Technological Parameters

Namoune

Hamid

Taleb

2015

JERA

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In this work, we study the effect of the geometrical and technological parameters on the performance of stacked transformer in crystal metal oxide silicon (CMOS). It also presents the equivalent electrical model of on-chip stacked transformer based on the “2-p” architecture and contains the equations to evaluate its components values. These equations depend on both technological and geometric characteristics of the transformer. The inductance (primary or secondary) and the quality factor (primary or secondary) of on chip stacked transformer depend on the geometrical and technological parameters. We study the effect of the geometrical and technological parameters of on chip transformer, so to establish a methodology of its dimensioning and consequently its integration in a chip. The various geometrical and technological parameters that influence the performance of the transformer: capacitance between primary and secondary coils, oxide capacitance between the (primary coil, secondary coil) and substrate, substrate ohmic loss, and substrate capacitance.

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Toward a fully integrated 2.4 GHz differential pair class-E power amplifier using on-chip RF power transformers for Bluetooth systems

Cited by 10 publications

References 7 publications

Integrated On-Chip Transformers: Recent Progress in the Design, Layout, Modeling and Fabrication

Integrated On-Chip Transformers: Recent Progress in the Design, Layout, Modeling and Fabrication

Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview

Stacked Transformer: Influence of the Geometrical and Technological Parameters

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