Total Reflection X-Ray Fluorescence Analysis Excited by Synchrotron Radiation (SR-TXRF): Variation of Excitation Conditions and Sample Geometries

Görgl, R.; Wobrauschek, P.; Kregsamer, P.; Streli, Ch.; Haller, M.; Knöchel, A.; Radtke, Martin

doi:10.1002/(sici)1097-4539(199707)26:4<189::aid-xrs210>3.0.co;2-0

Cited by 26 publications

(6 citation statements)

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“…In general, two excitation-detection geometries are possible for the case of a side-looking detector, which makes use of the linear polarization of the Sr. According to a comparison performed by Görgl et al 91 and Pepponi et al, 92 the vertical orientation of the reflector is advantageous in most cases over the horizontal orientation. A vacuum chamber SR-TXRF set-up has been recently installed at HASYLAB, DESY, Hamburg, beamline L-a bending magnet beamline.…”

Section: Synchrotron Radiation-induced Txrfmentioning

confidence: 99%

Total reflection x‐ray fluorescence analysis—a review

2007

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Total reflection x-ray fluorescence analysis (TXRF) is a special energy-dispersive x-ray analytical technique extending XRF down to the ultra trace element range. Detection limits of picograms or nanograms per gram levels are reached with x-ray tube excitation. Using synchrotron radiation as excitation source, femtogram levels are detectable, particularly important for Si wafer surface analysis. TXRF is specially suited for applications in which only a very small amount of sample is available, as only a few micrograms are required for the analysis. In this review, an overview of theoretical principles, advantages, instrumentation, quantification and application is given. Chemical analysis as well as surface analysis including depth profiling and thin-film characterization is described. Special research results on extension to low-Z elements, excitation with synchrotron radiation and x-ray absorption spectroscopy (XAS) for chemical speciation at trace levels are reviewed.

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Section: Synchrotron Radiation-induced Txrfmentioning

confidence: 99%

Total reflection x‐ray fluorescence analysis—a review

2007

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“…Currently, research activities in this field are in progress. [5][6][7] Besides these systemic parts, however, the origin of the background spectrum, another main factor deciding the MDL, is still obscure for lack of reliable quantitative calculation. The important energy range of the background spectrum in SR-TXRF is between the substrate fluorescence peak and scatter of incident x rays and the origin has been speculated as photoelectron bremsstrahlung in an accurate experiment where the influence of the detection system could be neglected.…”

Section: Photoelectron Bremsstrahlung Spectrum In Synchrotron Radiatimentioning

confidence: 99%

Photoelectron bremsstrahlung spectrum in synchrotron radiation excited total reflection x-ray fluorescence analysis of silicon wafers

Shin

Koo

et al. 1999

Journal of Applied Physics

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Articles you may be interested inMonte Carlo simulation applied in total reflection x-ray fluorescence: Preliminary results AIP Conf. Proc. 1529, 66 (2013); 10.1063/1.4804085 X-ray beam induced current-a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in siliconTotal reflection x-ray fluorescence analysis with synchrotron radiation and other sources for trace element determination AIP Conf.When synchrotron radiation is used as an excitation source, the total reflection x-ray fluorescence analysis of surface contamination on silicon wafer has an extremely low background intensity that determines the minimum detection limit. In this article, the background spectrum originating from the photoelectron bremsstrahlung is calculated using the Monte Carlo method. The doubly differential electron bremsstrahlung cross sections obtained from the Born approximation modified by the Elwert factor and with the use of the form factor approach for screening are used instead of empirical formulas. In addition to the bremsstrahlung spectrum produced from the silicon wafer, the bremsstrahlung intensity that photoelectrons, which escape from the silicon wafer, produce in the filter attached to the detector is also calculated in accordance with the usual synchrotron radiation excited total reflection x-ray fluorescence experimental conditions. The calculated photoelectron bremsstrahlung spectra are compared with experimental results and the conditions for a lower minimum detection limit are discussed.

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“…4 -6 In general, two excitation-detection geometries are possible for the case of a side-looking detector, which makes use of the linear polarization of synchrotron radiation. According to a comparison performed by Görgl et al 7 and Pepponi et al, 8 set-up, x-ray absorption near-edge structure (XANES) measurements on tiny sample amounts and low concentrations in the trace element region are feasible. Previous experiments have been performed at HASYLAB, Beamline L 9 for medium-Z elements and also at the PTB undulator beamline at BESSY 2 for low-Z elements.…”

Section: Introductionmentioning

confidence: 99%

A new SR‐TXRF vacuum chamber for ultra‐trace analysis at HASYLAB, Beamline L

Streli

Pepponi²,

Wobrauschek

et al. 2005

X-Ray Spectrometry

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A new vacuum chamber for synchrotron radiation-induced total reflection x-ray fluorescence (SR-TXRF) analysis has been installed at HASYLAB, DESY, Hamburg, beamline L utilizing the translation and rotation stages of the regular microfocus setup for adjustment. The chamber is equipped with an automatic sample loader for 30 mm diameter quartz reflectors for inserting the prepared sample reflectors in the measuring position with high reproducibility. Alternatively, a chuck can be inserted allowing various sizes and shapes of samples to be measured. The fluorescence radiation emitted by the sample was measured by a silicon drift detector (SDD) with a 5 mm 2 active area and detection limits of 15 fg have been obtained on a sample containing 100 pg of Ni using an Ni/C multilayer monochromator. Using the Si 111 crystal monochromator also x-ray absorption near edge structure (XANES) investigations in total reflection geometry on trace elements are feasible. Cr K-edge XANES measurements of C. avellana L. (hazel) pollen (20 ppm Cr concentration) and on an urban aerosol sample are presented. The Cr content in the pollen amounts to about 20 ppm, Detection limits of Cr were found to be 40 pg for a 30 s measuring time, which seems to be reasonable for performing energy scans for x-ray absorption fine structure measurements. Further, the setup is suitable to perform angle scans to determine depth profiles of implants in Si wafers. This was tested for ultra-shallow implants of As in Si.

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Total Reflection X-Ray Fluorescence Analysis Excited by Synchrotron Radiation (SR-TXRF): Variation of Excitation Conditions and Sample Geometries

Cited by 26 publications

References 0 publications

Total reflection x‐ray fluorescence analysis—a review

Total reflection x‐ray fluorescence analysis—a review

Photoelectron bremsstrahlung spectrum in synchrotron radiation excited total reflection x-ray fluorescence analysis of silicon wafers

A new SR‐TXRF vacuum chamber for ultra‐trace analysis at HASYLAB, Beamline L

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