Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

Virmontois, Cédric; Goiffon, Vincent; Magnan, Pierre; Saint-Pé, Olivier; Girard, Sylvain; Petit, Sophie; Rolland, G.; Bardoux, A.

doi:10.1109/tns.2011.2171005

Cited by 60 publications

(56 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A large number of levels are found after proton irradiations, even for the lowest doses. As explained in [25], this means that the observed RTS is related to displacement damage RTS, i.e. metastable defects created by displacement damage can present multi-level RTS.…”

Section: Dark Current Random Telegraph Signalmentioning

confidence: 91%

See 1 more Smart Citation

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations. Index Terms-Active pixel sensor (APS), CMOS image sensor (CIS), displacement damage () dose , monolithic active pixel sensor (MAPS), pinned photodiode (PPD), random telegraph signal (RTS), single event effects (SET), total ionizing dose (TID).

show abstract

Section: Dark Current Random Telegraph Signalmentioning

confidence: 91%

“…The main RTS parameters are presented, the number of levels, the maximum amplitude distribution and the mean time between transitions. Previous studies [25]- [27] provide specific values, such as the average maximum amplitude, the concentration of defects per dose, and the time constant between transitions. Fig.…”

Section: Dark Current Random Telegraph Signalmentioning

confidence: 99%

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…[4][5][6][7][8][9] The different types of CMOS APS image sensors with different pixel architectures such as three-transistor active pixels (3T-pixels) and Pinned Photo Diodes (PPD) pixels, 4,5 and different process technology such as 0.7, 0.5, 0.35, 0.18 and 0.13-µm has been investigated by exposing to ionizing radiation. [6][7][8][9] Displacement damage caused by energetic particles such as neutrons or protons induces stable bulk traps with energy levels within the band-gap, which can lead to the performance degradation of CMOS APS image sensors. Displacement damage effects are also a key issue for solid state image sensors (Charge coupled device, CMOS APS) exposed to space radiation environments 6 or used in nuclear physics experiments.…”

Section: Introductionmentioning

confidence: 99%

“…the literature. 9 However, the combined neutron displacement damage and TID damage in CMOS APS image sensors have not yet been reported. The research reported herein examines the combined reactor neutron beam and 60 Co γ-ray radiation effects on CMOS APS image sensors.…”

Section: Introductionmentioning

confidence: 99%

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

et al. 2015

View full text Add to dashboard Cite

The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to 60Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence), and then exposed to 60Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (KD), the dark signal non-uniformity (DSNU), and the noise (VN) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.

show abstract

“…Many studies have already been dedicated to the ionizing effects on CMOS APS image sensors. [3][4][5][6][7][8][9][10] On the contrary, fewer studies focus on displacement damage effects on CMOS APS image sensors, which are a subject of ongoing research. 11,12 Displacement damage effects are a key issue for solid-state image sensors (CCD, CID, and CMOS APS) exposed to space radiation environments 13 or used in nuclear physics experiments.…”

Section: Introductionmentioning

confidence: 99%

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

et al. 2014

View full text Add to dashboard Cite

The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal spike, dark signal non-uniformity (DSNU), noise (VN), saturation output signal voltage (VS), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.

show abstract

Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

Cited by 60 publications

References 26 publications

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Contact Info

Product

Resources

About