Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Clark, Lawrence T.; Brown, William E; Holbert, Keith E.; Rao, A.; Bikkina, Phaneendra; Turowski, Marek; Levy, Andrew; Olvarez, T.; Butler, Jim D.; YoungSciortino, Clifford; Guertin, S. M.

doi:10.1109/tns.2023.3244106

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Total Ionizing Dose Response of a 22-nm Compiled Fully Depleted Silicon-on-Insulator Static Random Access Memory

Cited by 4 publications

References 21 publications

Ternary SRAM Cell Designs for Next-Generation: A Comprehensive Investigation of 6T, 8T, and 10T Designs

Ternary SRAM Cell Designs for Next-Generation: A Comprehensive Investigation of 6T, 8T, and 10T Designs

Analysis of the Characteristics of Synchronization System Components for High-Speed Data Networks

SEE Test Results for SRAM and Register Files Compiled on 22nm Fully-Depleted-Silicon-on-Insulator (22FDX)

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