Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Bezhenova, Varvara; Michalowska-Forsyth, Alicja Malgorzata

doi:10.1109/apemc.2016.7522739

Cited by 3 publications

(3 citation statements)

References 12 publications

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“…The influence of channel width on TID response has been reported in bulk technology. [6][7][8][9][10] Most of the positive charges emerging during irradiation, which have escaped from the initial recombination, may be quickly trapped in the STI oxide along the conduction channel. The accumulation of positive charge eventually builds up a sufficient electric field to turn on an inversion channel where source-drain leakage current flows.…”

Section: Enhanced Radiation-induced Narrow Channel Effects (Rince)mentioning

confidence: 99%

“…During the past years, RINCE has been discussed widely in bulk technology. [6][7][8][9][10] However, few papers about RINCE in SOI technology have been published. References [11] and [12] focus on the threshold voltage shift and off-state leakage current, and reference [13] is devoted to the study of radiationinduced mobility degradation: in these studies there was a lack of a model to explain the said results.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Zhang

et al. 2018

Chinese Phys. B

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Total ionizing dose responses of different transistor geometries after being irradiated by 60 Co γ-rays, in 0.13-µm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

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Section: Enhanced Radiation-induced Narrow Channel Effects (Rince)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Zhang

et al. 2018

Chinese Phys. B

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“…One of the parameters that degrades is the leakage current of a MOS transistor. Under high ionizing dose, increase in leakage current by few orders of magnitude can be measured [1][2][3]. Due to ionization electron-hole pairs are created across the IC volume.…”

Section: Introductionmentioning

confidence: 99%

Aspect ratio of radiation-hardened MOS transistors

Bezhenova

Michalowska-Forsyth

2018

Elektrotech. Inftech.

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The reliability of electronics in the proximity of the ionizing radiation is a key requirement in particular in high energy physics, nuclear power or space applications. One way to improve robustness of MOS transistors operating in such environments is to use enclosed layout techniques. This special layout approach helps to maintain leakage current of MOS transistors at low level even after irradiation, in contrast to a linear layout MOS transistor, where leakage current could increase by orders of magnitude. The issue, arising with enclosed layout transistors, is related to channel modelling, since the MOS transistor gate geometry is no more a simple rectangle. In this work, modelling of equivalent width and length dimensions of the MOS transistor channel under the gate is addressed. For this purpose transistors of four types and two layout versions, fabricated in a standard 180 nm CMOS process, are characterized. The accuracy of available models for equivalent channel dimensions is analysed, along with a new simplified geometrical model developed by the authors. They are further compared to the empirically extracted aspect ratio. The improvement possibilities for the considered models are then identified.Keywords: MOS transistor; radiation hardness; ionizing radiation; enclosed layout; aspect ratio Kanalgröße eines strahlungsfesten MOS-Transistors. Modellierung der äquivalenten Kanalgröße eines integrierten MOS-Transistors mit strahlungsfestem "enclosed"-Layout. Die Zuverlässigkeit der Elektronik in der Nähe von ionisierender Strahlung ist eine wichtige Anforderung in

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A radiation-hard curvature compensated bandgap voltage reference

Auer

Bezhenova

2018

Elektrotech. Inftech.

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Total ionizing dose effects on MOS transistors fabricated in 0.18 µm CMOS technology

Cited by 3 publications

References 12 publications

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Enhanced radiation-induced narrow channel effects in 0.13-${\boldsymbol{\mu }}{\rm{m}}$ PDSOI nMOSFETs with shallow trench isolation

Aspect ratio of radiation-hardened MOS transistors

A radiation-hard curvature compensated bandgap voltage reference

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