Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Mo, Jianchu; Chen, Hua; Wang, Liping; Yu, Faxin

doi:10.1007/s10836-017-5647-z

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…Under the off state, the drain-gate terminal of the depletion-mode GaN HEMT and the source-drain channel of silicon MOSFET is the main current-leakage paths. Previous reports [14][15][16] showed that N-channel MOSFET is very sensitive to TID and that the drain current increases with the accumulated gamma-ray dose. In addition, the defect caused by neutron irradiation in the silicon layer and Si-SiO 2 interface could lead to an increase in the channel resistance and a decrease in the carriers' mobility in the MOSFET device.…”

Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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“…Wan et al proposed that Si 3 N 4 is a promising gate dielectric to achieve SEB-hardened VDMOS [13]. In addition, [14] high-κ dielectric material for an inner dielectric layer (ILD) and passivation layer designs have been identified to significantly improved the Total Ionizing Dose (TID) and SEB performance of VDMOS. However, the effects of SEB on UMOSFETs using highκ dielectric as a gate oxide has not been fully investigated and discussed.…”

Section: Introductionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2 ) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3 , Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other highκ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics.

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Investigation of irradiation effects and model parameter extraction for VDMOS field effect transistor exposed to gamma rays

Sun

Wang

Liu

et al. 2021

Radiation Physics and Chemistry

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Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Cited by 6 publications

References 8 publications

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Investigation of irradiation effects and model parameter extraction for VDMOS field effect transistor exposed to gamma rays

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