Total emissivity of silicon at high temperatures

Jain, Sumit; Agarwal, Seema; Borle, W.N.; Tata, S.

doi:10.1088/0022-3727/4/8/323

Cited by 16 publications

(4 citation statements)

References 4 publications

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“…This determined an emissivity setting of 0.46, which is comparable to values that were reported for Si with similar doping. 37 Temperature measurement relative to T c was then accurate to within 3 K.…”

Section: Methodsmentioning

confidence: 99%

Step line tension and step morphological evolution on the Si(111)(1×1)surface

et al. 2008

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The temperature dependence of the step line tension on the Si͑111͒ ͑1 ϫ 1͒ surface is determined from a capillary wave analysis of two-dimensional island edge fluctuations and straight step fluctuations that are observed with low energy electron microscopy. The line tension decreases by nearly 20% with a linear temperature coefficient of −0.14 meV/ Å K between 1145 and 1233 K. Temporal correlations of step fluctuations exhibit the distinctive signature in the wavelength dependence of the relaxation time of a terrace diffusion-limited mechanism for step motion. We also find that the role of desorption in island decay increases dramatically in the temperature range ͑1145-1380 K͒ that island decay is studied. Consequently, we generalize the current quasistatic model of island decay to take account of desorption. The evaluation of the island decay time with this model referenced to the temperature-dependent line tension accurately determines activation energies that are relevant to mass transport and sublimation.

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Section: Methodsmentioning

confidence: 99%

Step line tension and step morphological evolution on the Si(111)(1×1)surface

et al. 2008

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“…For example, the total emissivity coefficient of about 0.13-0.18 was determined for a SiN x /SiO 2 /SiN x (0.2/0.4/0.2 µm) membrane [26]. That is small with respect to the emissivity coefficient 0.5-0.7 of bulk p-and n-type silicon, which in turn is strongly dependent on doping [27]. The emissivity of the membrane is small with respect to the tracks, which include p-and n-type doped polysilicon.…”

Section: Measuring Cellmentioning

confidence: 99%

Temperature distribution in a thin-film chip utilized for advanced nanocalorimetry

Минаков

Morikawa

Hashimoto

et al. 2005

Meas. Sci. Technol.

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High sensitivity and fast calorimeters based on silicon nitride thin-film technology are used to study thermal properties of sub-micron samples and transition kinetics on a millisecond time scale. A commercially available thin-film sensor was utilized in our previous works for fast-scanning calorimetric measurements. A non-adiabatic condition allows not only fast heating but also fast cooling at rates up to 10 000 K s−1. Heat transfer from the sub-micron membrane was realized through an ambient gas. In order to justify the calibration procedure utilized in non-adiabatic thin-film calorimetry, the temperature distributions in the membrane and in the ambient gas have been studied. Results from an analytical solution of the heat-transfer problem have been compared with the temperature profiles obtained by fast infrared thermographic measurements under static and oscillating heating–cooling conditions. A theoretical background for ultra-fast-cooling experiments has been formulated. Actually, the best cooling medium for the ultra-fast thin-film cooling calorimetry is a gas at a reduced pressure. The thermal conductivity of a gas is not a limiting factor for the ultra-fast-cooling experiments.

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“…The sample temperature was obtained pyrometrically using Planck's law and taking the camera's quantum efficiency into account. The emissivity of silicon has been treated as constant over the temperature range 1300-1687 K and over the visible region [10][11][12][13]. The green and blue channel intensities are very low even at temperatures close to the melting point of silicon.…”

Section: Resultsmentioning

confidence: 99%

Transient light emission from the silicothermic reduction of magnesium oxide with potential for monitoring intermediate compound formation and decay

Gebensleben

Becker

2020

SN Appl. Sci.

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Small silicon samples were brought into contact with magnesium oxide substrate plates and heated under vacuum. At heating temperatures above 1400 K, a transient light emission effect in the Si/MgO interface was observed. The changes in sample brightness are likely caused by a thermal effect. Typically the sample temperature decreases gradually by 40-80 K and is followed by a very fast rise in temperature. The light emission effect may be correlated to the transient formation and decomposition of an inhibiting layer of magnesium silicate and the endothermic formation of gaseous silicon oxide. Tempering a silicon sample on a magnesium oxide plate for several hours produced an etch pit in the substrate material from which the silicon sample split off during the cooling phase. The etch pit was investigated via electron microscopy. EDXS analysis of the finely structured surface of the reaction zone reports a composition of 2/1/5 (Mg/Si/O). A crosssection of the same area reveals a thin layer of reaction products on top of the substrate material.

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Total emissivity of silicon at high temperatures

Cited by 16 publications

References 4 publications

Step line tension and step morphological evolution on the Si(111)(1×1)surface

Step line tension and step morphological evolution on the Si(111)(1×1)surface

Temperature distribution in a thin-film chip utilized for advanced nanocalorimetry

Transient light emission from the silicothermic reduction of magnesium oxide with potential for monitoring intermediate compound formation and decay

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