Topology and chemical order in As Ge Se1−2 glasses: A high-resolution X-ray photoelectron spectroscopy study

Golovchak, R.; Shpotyuk, O.; Iovu, M. S.; Kovalskiy, A.; Jain, Himanshu

doi:10.1016/j.jnoncrysol.2011.06.019

Cited by 23 publications

(19 citation statements)

References 27 publications

(65 reference statements)

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“…These homopolar bonds have also been demonstrated in publications concerning XPS of selenide glass [41,42]. The proportion of (Ge, Sb)-Sb-Se 2 and (Ge, Sb)-Ge-Se 3 species is about 5.4 at.% and 1. of the film deposited at lower pressure.…”

Section: Thin Films Of Ge-sb-se Systemsupporting

confidence: 62%

“…5(e) and 5(f)). Typically, Ge,Sb-Se-Ge,Sb entities are expected to be present in the glass network of sputtered films and located at similar chemical shifts due to comparable electronegativities of Ge (2.01) and Sb (2.05) atoms [41][42][43].…”

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

“…The presence of SeO x is clearly observed within the spectra obtained for a different angle of incidence; particularly at 70° (for which the in-depth analysis is restricted to an extreme surface of 2-3 nm), the presence of such oxygen containing entities was revealed. It is often proposed that this second component is attributed to Se-Se-Ge,Sb entities [41][42][43]. The proportion of Se-Se-Ge,Sb entities, if it exists, is predictable, from Raman analysis and chemical composition, to be higher for the (5.10−2 mbar) film than the (5.10−3 mbar) film, which presents a deficit of about ~9% of Se taking into account the real film composition determined by XPS (Ge 30.7 Sb 9.9 Se 59.4 ).…”

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

“…The electronic structure of Se could be affected by this specific edge sharing when compared to a corner sharing between two [GeSe 4/2 ] tetrahedra. A similar scheme was applied for Ge 3d core level, fitted with two types of components (corner sharing and edge sharing), for the GeSe system rich in selenium [41]. Since the proportion of related edge sharing [GeSe 4/2 ] entities increases in the case of 5.10 −2 mbar film according to Raman spectra analysis (Fig.…”

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

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RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Verger¹,

Nazabal²,

Colas³

et al. 2013

Opt. Mater. Express

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Abstract:The primary objective of this study is the development of transparent thin film materials in the IR enabling strong infrared absorption of organic compounds in the vicinity of metal nanoparticles by the surface plasmon effect. For developing these optical micro-sensors, heterostructures combining gold nanoparticles and chalcogenide planar waveguides are fabricated and adequately characterized. Single As 2 S 3 and Ge 25 Sb 10 Se 65 amorphous chalcogenide thin films are prepared by radiofrequency magnetron sputtering. For the fabrication of gold nanoparticles on a chalcogenide planar waveguide, direct current sputtering is employed. Fabricated single layers or hetero-structures are characterized using various techniques to investigate the influence of deposition parameters. The nanoparticles of gold are functionalized by a self-assembled monolayer of 4-nitrothiophenol. Finally, the surface enhanced infrared absorption spectra of 4-nitrothiophenol self-assembled on fabricated Au/Ge-Sb-Se thin films hetero-structures are measured and analyzed. This optical component presents a ~24 enhancement factor for the detection of NO 2 symmetric stretching vibration band of 4-nitrothiophenol at 1336 cm −1 . 232-239 (1999). 19. L. Tichý, H. Ticha, P. Nagels, R. Callaerts, R. Mertens, and M. Vlcek, "Optical properties of amorphous As-Se and Ge-As-Se thin films," Mater. Lett. 39(2), 122-128 (1999). 20. J. Charrier, M. L. Anne, H. Lhermite, V. Nazabal, J. P. Guin, F. Charpentier, T. Jouan, F. Henrio, D. Bosc, and J. L. Adam, "Sulphide GaxGe25-xSb10S65(x=0,5) sputtered films: Fabrication and optical characterizations of planar and rib optical waveguides," J. Appl.

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Section: Thin Films Of Ge-sb-se Systemsupporting

confidence: 62%

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

Section: Thin Films Of Ge-sb-se Systemmentioning

confidence: 99%

See 2 more Smart Citations

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Verger¹,

Nazabal²,

Colas³

et al. 2013

Opt. Mater. Express

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“…Within this ternary glass system, a careful analysis of trends in physico-chemical properties is performed by studying their compositional dependences along a characteristic cut-line of glass-forming region. Some authors claim that the knowledge of Z (mean coordination number reflecting the global connectivity of glass) and the glass composition (chemical short-range order) is needed to have a balanced view of the evolution of physico-chemical properties in ternary system [27]. In our case, we consider a variation of composition on the cut-line (GeSe 2 ) 100-x (Sb 2 Se 3 ) x to investigate the introduction of antimony versus properties of glasses.…”

mentioning

confidence: 99%

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

Olivier¹,

Tchahame²,

Němec³

et al. 2014

Opt. Mater. Express

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Chalcogenide glasses from (GeSe 2 ) 100-x (Sb 2 Se 3 ) x system were synthesized, with x varying from 5 to 70, in order to evaluate the influence of antimony selenide addition on nonlinear optical properties and photosensitivity. Nonlinear refractive index and two photon absorption coefficients were measured both at 1064 nm in picosecond regime using the Z-scan technique and at 1.55 µm in femtosecond regime using an original method based on direct analysis of beam profile change while propagating in the chalcogenide glasses. The study of their photosensitivity at 1.55 m revealed highly glass composition dependent behavior and quasi-photostable compositions have been identified in femtosecond regime. To better understand these characteristics, the evolution of the glass transition temperature, density and structure with the chemical composition were determined.

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The Structure of GaSbSe Glasses by High‐Resolution X‐Ray Photoelectron Spectroscopy

Golovchak

Calvez

Lecomte

et al. 2021

Physica Status Solidi (b)

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To understand the unique physical properties of GaSbSe glasses, high‐resolution X‐ray photoelectron spectroscopy (XPS) studies are performed on representative compositions within the glass‐forming region. The observed peaks in the valence band as well as in Ga, Sb, and Se core‐level XPS spectra are related to the main structural building blocks of the covalent network. On the basis of disproportionality equations and quantitative XPS analysis, the SeSeSe fragments are shown to exist in the glasses with 65 and 68 at% of Se, whereas the samples with lower Se content are shown to contain a significant concentration of SeSe bonds instead. Although the majority of Ga atoms are deemed to form fourfold coordinated units, the existence of Ga atoms in threefold coordination, those bonded to other metal, and forming Ga clusters of undissolved Ga are also plausible on the basis of Ga 3d XPS spectrum analysis. Partial or full destruction of antimony selenide pyramids is found in glasses with low Se content.

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Topology and chemical order in As Ge Se1−2 glasses: A high-resolution X-ray photoelectron spectroscopy study

Cited by 23 publications

References 27 publications

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy

Structure, nonlinear properties, and photosensitivity of (GeSe_2)_100-x(Sb_2Se_3)_x glasses

The Structure of GaSbSe Glasses by High‐Resolution X‐Ray Photoelectron Spectroscopy

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