2018
DOI: 10.1103/physrevb.97.075419
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Topological phases of topological-insulator thin films

Abstract: We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3. As a result, while the magnitude of the matrix element at the center of the surface Brillouin Zone gives the gap in the energy spectrum, the sign of the mat… Show more

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Cited by 22 publications
(32 citation statements)
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“…However, when the film thickness is reduced (below a few quintuple layers) the T,B surface states overlap and a hybridisation of equal spin (and therefore equal helicity) eigenstates develops. This problem has been fundamentally treated and analyzed in great generality in the work of Asmar et al [19] and also in Ref. 29.…”
Section: Hybridisation and Gap Opening Of Surface States In Ti Thin F...mentioning
confidence: 99%
See 3 more Smart Citations
“…However, when the film thickness is reduced (below a few quintuple layers) the T,B surface states overlap and a hybridisation of equal spin (and therefore equal helicity) eigenstates develops. This problem has been fundamentally treated and analyzed in great generality in the work of Asmar et al [19] and also in Ref. 29.…”
Section: Hybridisation and Gap Opening Of Surface States In Ti Thin F...mentioning
confidence: 99%
“…The thickness dependent effective hybridisation t(d) may be obtained from the solution of a subtle boundary value problem for the thin film [19], starting form the k • p Hamiltonian of the bulk bands. It may be represented by the phenomenological form [19,21]…”
Section: A the Oscillation Model Of Hybridisation With Film Thicknessmentioning
confidence: 99%
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“…Due to the spatial extent of the surface state in the z -direction, it has been predicted that ultrathin slabs of 3D TIs provide a route to a hybridization gap around the DP [6,7], thereby gapping out the topological surface states and paving the way to topologically protected one-dimensional (1D) edge state transport, very comparable to the quantum spin Hall (QSH) effect in HgTe quantum wells [8][9][10]. Even though Bi 2 Se 3 presents the largest bulk bandgap, Bi 2 Te 3 and Sb 2 Te 3 are predicted to be more appealing candidates to exhibit 1D transport due to their relatively short edge state decay length in the ultrathin film limit [7,11,12]. While stoichiometric slabs have been well-investigated spectroscopically [13][14][15], even in the limit of hybridized surface states [16], the electronic structure of ultrathin films of off-stoichiometric (Bi 1−x Sb x ) 2 Te 3 is still relatively unexplored.…”
Section: Introductionmentioning
confidence: 99%