Topological phase transition in the layered magnetic compound 
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: Spin-orbit coupling and interlayer coupling dependence

Zhou, Liqin; Tan, Zhiyun; Yan, Dayu; Fang, Zhong; Shi, Youguo; Weng, Hongming

doi:10.1103/physrevb.102.085114

Cited by 58 publications

(27 citation statements)

References 52 publications

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“…For MST, previous experimental evidence supports much higher levels of antisite defects [2][3][4]. In particular, the strongly reduced low-field "saturation" magnetization of <2μ B in MST suggests a significant concentration of AF coupled antisite defects are present that act to compensate the net magnetic moment [3,11].…”

Section: Analysis Of Magnetization Data For Mstmentioning

confidence: 85%

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Lai

Yan

et al. 2021

Phys. Rev. B

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MnBi 2 Te 4 (MBT) materials are promising antiferromagnetic topological insulators in which field-driven ferromagnetism is predicted to cause a transition between axion insulator and Weyl semimetallic states. However, the presence of antiferromagnetic coupling between Mn/Bi antisite defects and the main Mn layer can reduce the low-field magnetization, and it has been shown that such defects are more prevalent in the structurally identical magnetic insulator MnSb 2 Te 4 (MST). We use high-field magnetization measurements to show that the magnetization of MBT and MST occur in stages and full saturation requires fields of ∼60 T. As a consequence, the low-field magnetization plateau state in MBT, where many determinations of the quantum anomalous Hall state are studied, actually consists of ferrimagnetic septuple blocks containing both uniform and staggered magnetization components.

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Section: Analysis Of Magnetization Data For Mstmentioning

confidence: 85%

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Lai

Yan

et al. 2021

Phys. Rev. B

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“…The AFM MnSb 2 Te 4 was shown to be topologically trivial. [ 12b,13 ] The Sb doping may also introduce more antisite defects as we discuss in this paper. Doping of MnBi 2 Te 4 by electrically active acceptor dopants has not been reported.…”

Section: Introductionmentioning

confidence: 99%

“…[ 12 ] The Fermi level is tuned to near the VBM after replacing about 30% Bi by Sb. [ 12b,c ] The drawback of Sb doping is the reduction of the SOC effect and the band gap, [ 12b,13 ] which positions the Dirac point closer to band edges, making the transport measurement of surface states more difficult. The AFM MnSb 2 Te 4 was shown to be topologically trivial.…”

Section: Introductionmentioning

confidence: 99%

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi₂Te₄ and MnBi₄Te₇ by Defect Engineering and Chemical Doping

Yan

Cooper

et al. 2020

Adv Funct Materials

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MnBi 2 Te 4 and MnBi 4 Te 7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, systematic density functional theory calculations reveal specific material chemistry and growth conditions that determine the defect formation and dopant incorporation in MnBi 2 Te 4 and MnBi 4 Te 7. The large strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defects and substitutional dopants. The results here show that the abundance of antisite defects is responsible for the observed n-type metallic conductivity. A Te-rich growth condition is predicted to reduce the bulk free electron density, which is confirmed by experimental synthesis and transport measurements in MnBi 2 Te 4. Furthermore, Na doping is proposed to be an effective acceptor dopant to pin the Fermi level within the bulk band gap to enable the observation of surface quantum transport. The defect engineering and doping strategies proposed here should stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi 2 Te 4 , MnBi 4 Te 7 , and related magnetic topological insulators.

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“…The relationship between magnetism and TI behavior has dramatically inspired great attention in recent years due to their potential prospects to realize many interest topological phenomena, including quantum anomalous Hall Effect, topological axion insulators, etc. More recent investigations indicated to the existence of layered chalcogenide MnSb 2 Te 4 which is a structural analog of the well-known MnBi 2 Te 4 , is an antiferromagnetic semiconductor with a trivial energy gap [15][16][17]. In this connection, layered manganese antimony (or bismuth) tellurides and phases based on them with partial substitution of manganese with other elements can be a platform for experimental visualization of many annown yet topological quantum effects.…”

Section: Introductionmentioning

confidence: 99%

3D ANALYTICAL MODELING OF CRYSTALLIZATION SURFACES OF THE MnTe–SnTe–Sb2Te3 SYSTEM

Orujlu¹,

Mammadov²,

Бабанлы³

2021

AChJ

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An analytical method was used for 3D modeling of crystallization surfaces of the MnTe–SnTe–Sb2Te3 system based on the existing data of boundary systems and a small number of experimental DTA- measurements. All analytical dependencies temperatures on composition for liquidus of the binary and three-system were obtained using the 2D and 3D options of the OriginLab software. The obtained results allowed us to visualize the crystallization surfaces of the phases based on initial components of the MnTe–SnTe–Sb2Te3 system as a separate form and in one graph

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Topological phase transition in the layered magnetic compound MnSb2Te4 : Spin-orbit coupling and interlayer coupling dependence

Cited by 58 publications

References 52 publications

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi₂Te₄ and MnBi₄Te₇ by Defect Engineering and Chemical Doping

3D ANALYTICAL MODELING OF CRYSTALLIZATION SURFACES OF THE MnTe–SnTe–Sb2Te3 SYSTEM

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Topological phase transition in the layered magnetic compound MnSb2Te4 : Spin-orbit coupling and interlayer coupling dependence

Cited by 58 publications

References 52 publications

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Defect-driven ferrimagnetism and hidden magnetization in MnBi2Te4

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

3D ANALYTICAL MODELING OF CRYSTALLIZATION SURFACES OF THE MnTe–SnTe–Sb2Te3 SYSTEM

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Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi₂Te₄ and MnBi₄Te₇ by Defect Engineering and Chemical Doping