Topological Phase Transition in Single Crystals of (Cd1−xZnx)3As2

Lu, Hong; Zhang, Xiao; Bian, Yi; Jia, Shuang

doi:10.1038/s41598-017-03559-2

Cited by 38 publications

(43 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The stoichiometry of this material can be transformed continuously into Cd 3 As 2 or Zn 3 P 2 by appropriate atomic substitutions, shifting its bandgap energy toward 1.5 eV and 0 eV, respectively. (Zn 1 −x Cd x ) 3 As 2 transforms from a semiconductor to a three‐dimensional Dirac semimetal as x reaches 0.62 . The ability to tune its direct bandgap energy makes this material system very attractive for long‐wavelength optoelectronics and as a constituent in multi‐junction solar cells.…”

Section: The Different Observed Phases Of Zn3as2 Their Space Group mentioning

confidence: 99%

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Stutz

Friedl

Burgess³

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Zn 3 As 2 is a promising earth-abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain-free Zn 3 As 2 nanosails, grown by metal-organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P4 2 /nmc (D 15 4h ) α"-Zn 3 As 2 metastable phase. Temperature-dependent Hall effect measurements indicate that the material is degenerately p-doped with a hole mobility close to 10 3 cm 2 V À1 s À1 . Our results display the potential of Zn 3 As 2 nanostructures for next generation energy harvesting and optoelectronic devices.The increasing production of high-performance electronic devices and the push towards generating energy in a sustainable manner leads to sustainability challenges for optoelectronic and photovoltaic (PV) technologies. Particularly affected are devices using atomic elements of scarce abundance in the earth's crust, which prevents their widespread deployment. In this context, highly functional materials made of earth-abundant elements are being sought for both PV and optoelectronic applications. The second most abundant element in the earth's crust, silicon, is a semiconductor very successfully deployed in the PV market. It suffers nonetheless from its indirect bandgap and the consequently high purity required for the production of efficient solar cells. Both characteristics increase the energy needs for silicon PV device production. The so-called "second generation" solar cells, built with much thinner, direct bandgap active layers, could in principle solve these two issues. Still, these thin film solar cells exhibit either a long energy payback time (amorphous silicon) or they use scarce and expensive elements (ex: copper, indium, gallium, selenium, cadmium, tellurium).Direct bandgap semiconductors employing earth-abundant elements could combine the advantages of all these material families. They would enable efficient light collection in a thin film of easily available materials. Copper zinc tin sulfide (CZTS) and zinc phosphide (Zn 3 P 2 ) have received increasing attention as materials satisfying these criteria for efficient and sustainable light conversion discussed so far. Belonging to the same family, zinc arsenide (Zn 3 As 2 ) is a p-type semiconductor structurally similar to Zn 3 P 2 . It exhibits a band gap around 1.0 eV [1] and potentially high hole mobilities. [2] The stoichiometry of this material can be transformed continuously into Cd 3 As 2 [3] or Zn 3 P 2[4] by appropriate atomic substitutions, shifting its bandgap energy toward 1.5 eV and 0 eV, respectively. (Zn 1Àx Cd x ) 3 As 2 transforms from a semiconductor to a threedimensional Dirac semimetal as x reaches 0.62. [5] The ability to tune its direct bandgap energy makes this material system very attractive for long-wavelength optoelectronics and as a constituent in multi-junction solar cells. M II 3 X V 2 comp...

show abstract

Section: The Different Observed Phases Of Zn3as2 Their Space Group mentioning

confidence: 99%

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Stutz

Friedl

Burgess³

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…The Cd 3 As 2 single crystals having one of these body‐center tetragonal structures are usually studied. However, structural transitions from a body‐center tetragonal phase to a primitive tetragonal phase with P4 2 /nmc symmetry then back to a body‐center tetragonal phase take place in the (Cd 1 −x Zn x ) 3 As 2 solid solutions with increasing x . The (Cd 0.6 Zn 0.36 Mn 0.04 ) 3 As 2 single crystal studied in this work did have the primitive tetragonal P4 2 /nmc structure. The structural (Cd 1 −x Zn x ) 3 As 2 transformations resulting from the x change is accompanied by a chemical‐doping‐controlled transition from a 3D Dirac semimetal to a conventional semiconductor with a critical x C = 0.38 point .…”

Section: Parameters Estimated From the Sdh Oscillations For Various Tmentioning

confidence: 68%

Asymmetry and Parity Violation in Magnetoresistance of Magnetic Diluted Dirac–Weyl Semimetal (Cd_0.6Zn_0.36Mn_0.04)₃As₂

Ivanov

Захвалинский

Nikulicheva

et al. 2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Orientation dependences of magnetoresistance, ρB À Á , of single crystal (Cd 0.6 Zn 0.36 Mn 0.04 ) 3 As 2 having tetragonal P4 2 /nmc symmetry have been studied. Three orientations between electrical current,J, flowing along crystal (100) plane and magnetic field,B, have been used as follows: 1)B is perpendicular to bothJ and (100) plane; 2)B is perpendicular toJ but parallel to (100) plane; 3)B is parallel to bothJ and (100) plane. Asymmetry in curves ρB À Á is observed for all orientations. For orientation (2), crossover from negative to positive magnetoresistance is found as magnetic field changes its direction from one position corresponding to negativeB to opposite direction corresponding to positiveB. So magnetoresistance parity typical for numerous solids is violated for this orientation. The Shubnikov-de Haas (SdH) oscillations are observed for all orientations above %1.8 T and below %40 K. The effective mass of electrons extracted from SdH oscillations analysis is found to be orientation dependent. Smeared kinks correlated with the SdH oscillations are also observed in the Hall effect study for orientation (1). Magnetoresistance peculiarities can be related to specific properties of the Dirac semimetals and their evolution under magnetic field.Magnetoresistance, ρB À Á , characterizing a change of the electrical resistivity, ρ, of solid in applied magnetic field,B, is

show abstract

“…One can see that the two results fit well, which shows that our method is effective and accurate. Experimentally, the p-n-p junction can be constructed by the electrical or chemical doping 43,44 . By tuning the electrostatic potential offset between the p and n regions into 0.18 eV and setting the length of the central n region to 270 nm, an electrostatic potential profile that can be approximated with a parabolic function 45 with the strength κ ≈ 10 eV μm −2 is obtained inside the p-n-p junction.…”

Section: Resultsmentioning

confidence: 99%

Chirality-dependent electron transport in Weyl semimetal p–n–p junctions

et al. 2019

View full text Add to dashboard Cite

Recently discovered Weyl semimetals have received considerable research interest due to the exotic Weyl fermion-like excitations and the nontrivial π Berry phase near the band degenerate points. Here we show that by constructing a Weyl semimetal p-n-p junction and restricting Weyl fermions into closed orbits with electric and magnetic confinements, the Berry phase acquired by the Weyl fermions can be controlled flexibly. This brings out two effects on electron transport through the junction: when the Berry phase is integer multiples of π an obvious phase shift is observed in the transmission map, whereas for non-integer ones of Berry phase the transmission shows strong chirality dependence and a large chiral or valley-level splitting can be induced. Utilizing this chirality splitting, we further propose a new method to measure the Berry phase in Weyl semimetals, which shows accuracy for various potential profiles and has practical applications in experiments.

show abstract

Topological Phase Transition in Single Crystals of (Cd1−xZnx)3As2

Cited by 38 publications

References 38 publications

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Asymmetry and Parity Violation in Magnetoresistance of Magnetic Diluted Dirac–Weyl Semimetal (Cd_0.6Zn_0.36Mn_0.04)₃As₂

Chirality-dependent electron transport in Weyl semimetal p–n–p junctions

Contact Info

Product

Resources

About

Topological Phase Transition in Single Crystals of (Cd1−xZnx)3As2

Cited by 38 publications

References 38 publications

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Asymmetry and Parity Violation in Magnetoresistance of Magnetic Diluted Dirac–Weyl Semimetal (Cd0.6Zn0.36Mn0.04)3As2

Chirality-dependent electron transport in Weyl semimetal p–n–p junctions

Contact Info

Product

Resources

About

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Asymmetry and Parity Violation in Magnetoresistance of Magnetic Diluted Dirac–Weyl Semimetal (Cd_0.6Zn_0.36Mn_0.04)₃As₂