Topological Hall effect in thin films of the Heisenberg ferromagnet EuO

Ohuchi, Yuki; Kozuka, Y.; Uchida, Masaki; Ueno, Kazunori; Tsukazaki, Atsushi; Kawasaki, Masashi

doi:10.1103/physrevb.91.245115

Cited by 72 publications

(67 citation statements)

References 38 publications

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“…A second, more pronounced peak at ~ 2 T has no corresponding feature in the magnetoresistance. These general features are very similar to the THE signal found in a wide range of other materials with magnetic skyrmions [1,2,9]. Their origin is magnetic as the peaks only appear below the Curie temperature.…”

supporting

confidence: 82%

“…Therefore, nonmagnetic phenomena like multicarrier Hall response cannot be the origin. Furthermore, they can be suppressed with an in-plane field (see Supplementary Information), which indicates that a twodimensional spin texture gives rise to the THE [9]. It is interesting that the THE only appears at 2 K, whereas the AHE and magnetoresistance hysteresis are already pronounced at 5 K, which may indicate a possible phase transition to a topological non-trivial spin structure.…”

mentioning

confidence: 95%

“…Skyrmions are a result of the Dzyaloshinskii-Moriya interaction in chiral magnets with a non-centrosymmetric crystal structure, such as MnSi [6], and they have generated significant interest for application in nonvolatile memories [2]. The topological Hall effect has also been observed in centrosymmetric crystals, such as SrFe1-xCoxO3 and pyrochlores [7,8], where helical structures form as a result of magnetic frustration, and in thin films, where inversion symmetry may be lifted by interfaces and surfaces [9,10]. Oxide films and interfaces that support topologically nontrivial spin textures and whose carrier density can be manipulated are interesting, because the potential for control by electric field effect and because proximity effects can be utilized to realize other exotic states within all-epitaxial heterostructures.…”

mentioning

confidence: 99%

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Evidence of a topological Hall effect in Eu1−xSmxTiO3

Ahadi

Galletti

Stemmer

2017

Applied Physics Letters

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We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1−xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ∼5 K and additional features that appear at 2 K. It is shown that these features are magnetic in origin and consistent with the topological Hall effect seen in material systems with topologically nontrivial spin textures such as skyrmions. The results open up interesting possibilities for epitaxial hybrid heterostructures that combine topological magnetic states, tunable carrier densities, and other phenomena.

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supporting

confidence: 82%

mentioning

confidence: 95%

mentioning

confidence: 99%

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Evidence of a topological Hall effect in Eu1−xSmxTiO3

Ahadi

Galletti

Stemmer

2017

Applied Physics Letters

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“…Recently, it has been shown that topologically nontrivial spin textures, such as skyrmions, which are stabilized through Dzyaloshinskii–Moriya (DM) interactions induced by broken spatial inversion symmetry, can give rise to additional contributions to Hall resistivity, known as the topological Hall effect . Given the richness of physics underlying behind the topological Hall effect as well as its potential for device applications, materials and artificial structures that exhibit this Hall effect have been intensively explored …”

Section: Introductionmentioning

confidence: 99%

Defect‐Induced Anomalous Transverse Resistivity in an Itinerant Ferromagnetic Oxide

Kan

Shimakawa

2018

Physica Status Solidi (b)

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Phenomena giving rise to voltages transverse to electric currents, such as anomalous and topological Hall effects, have been at the heart of modern condensed matter physics. Here, we show that epitaxial thin films of the itinerant ferromagnetic oxide SrRuO3 exhibit anomalous transverse resistivity associated with magnetization reversal, which is reminiscent of the emergence of the topological Hall effect. The behavior of the anomalous transverse resistivity of SrRuO3 films is found to depend on Ru vacancies. The anomalous peaking behavior in the transverse resistivity is enhanced when the film is thin enough that Ru vacancies significantly influence the magneto‐transport properties. Furthermore, films with fewer Ru vacancies exhibit no anomaly in transverse resistivity. Our observations imply that the Ru vacancies significantly influence the transverse resistivity in SrRuO3 and that defect‐induced changes in electronic structure are a plausible origin for the emergence of the anomalous peaking behavior in the transverse resistivity.

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“…Additional studies by Ohuchi et al [26] found skyrmions in centrosymmetric EuO thin films, implying that skyrmions are not only restricted to chiral materials or interfaces but varieties of formation mechanisms such as long-ranged magnetic dipolar interactions [27][28][29], frustrated exchange interactions [30] and four-spin exchange interactions [24] could work. (110) and (001) plane in FeGe.…”

Section: Skyrmions and Topological Hall Effectmentioning

confidence: 99%

Noncollinear spintronics and electric-field control: a review

et al. 2019

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Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention owing to exotic physical phenomena.In this Review, we firstly introduce two types noncollinear spin structures, i.e., the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases, and then move to relevant novel physical phenomena including topological Hall effect, anomalous Hall effect, multiferroic, Weyl fermions, spin-polarized current, and spin Hall effect without spin-orbit coupling in these noncollinear spin systems. Afterwards, we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects, which could enable ultralow power spintronic devices in future. In the final outlook part, we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current, verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.

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Topological Hall effect in thin films of the Heisenberg ferromagnet EuO

Cited by 72 publications

References 38 publications

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Defect‐Induced Anomalous Transverse Resistivity in an Itinerant Ferromagnetic Oxide

Noncollinear spintronics and electric-field control: a review

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