Topological electronic structure in the antiferromagnet HoSbTe

Yue, Shaosheng; Qian, Yuting; Yang, Meng; Geng, Daiyu; Yi, Changjiang; Kumar, Shiv; Shimada, Kenya; Cheng, Peng; Chen, Lan; Wang, Zhijun; Weng, Hongming; Shi, Youguo; Wu, Kehui; Feng, Baojie

doi:10.1103/physrevb.102.155109

Cited by 28 publications

(31 citation statements)

References 34 publications

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“…[ 64 ] On the other hand, gapped Dirac crossings have been probed in other LnSbTe compounds. [ 38,44,45 ] The sizable gap has been proposed to originate from the formation of a CDW order in non‐stoichiometric compounds, which enlarges the gap at the Dirac crossings. [ 38,44 ] Given that the CDW order occurs in the presence of Te substitution and vacancies in the Sb layer in LnSbTe compounds, [ 38,41,44,48 ] the undetectable gap in our ARPES study confirms the nearly stoichiometric composition and absence of structural distortions in our SmSbTe crystals.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 5b shows the calculated band structure for the AFM bulk SmSbTe with SOC, based on an A‐type AFM order with out‐of‐plane Sm moments aligned parallel within each plane but antiparallel between adjacent planes. Such magnetic structure has been adopted in other LnSbTe materials [ 45 ] and experimentally confirmed in CeSbTe. [ 26 ] Generally, an A‐type AFM structure with in‐plane FM order is not compatible with magnetic frustration.…”

Section: Resultsmentioning

confidence: 99%

“…Further, by opening a band gap at the nodal‐line and tuning E F into the band gap, SmSbTe could become a weak topological insulator consisting of stacked 2D topological insulators. [ 17,45 ] One practical approach toward stacked 2D topological insulators is composition engineering, which can induce a CDW gap and tune E F . [ 38,44 ] In the low temperature AFM state, each layer of SmSbTe possesses parallel magnetic moments for Sm which breaks time‐reversal symmetry.…”

Section: Resultsmentioning

confidence: 99%

“…[ 38–43 ] New phenomena such as Kondo effects, charge density waves (CDW), and correlation enhancement have been discovered in various LnSbTe compounds. [ 39,43,44 ] Those quantum phenomena, together with the non‐trivial topology generated by the Sb layer in LnSbTe, [ 25,26,41,45 ] offer great opportunities for exploring topological physics and for developing topological quantum material‐based devices.…”

Section: Introductionmentioning

confidence: 99%

“…The study of magnetic LnSbTe compounds is in an early stage with only few materials discovered, such as CeSbTe, GdSbTe, NdSbTe, and HoSbTe. [ 25,26,38–43,45,46 ] Here, we report the investigation of the previously unexplored SmSbTe member of the family. Our combined magnetization and specific heat measurements revealed antiferromagnetism and signatures of electronic correlation enhancement.…”

Section: Introductionmentioning

confidence: 99%

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Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

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The ZrSiS family of compounds hosts various exotic quantum phenomena due to the presence of both topological nonsymmorphic Dirac fermions and nodal‐line fermions. In this material family, the LnSbTe (Ln = lanthanide) compounds are particularly interesting owing to the intrinsic magnetism from magnetic Ln which leads to new properties and quantum states. In this work, the authors focus on the previously unexplored compound SmSbTe. The studies reveal a rare combination of a few functional properties in this material, including antiferromagnetism with possible magnetic frustration, electron correlation enhancement, and Dirac nodal‐line fermions. These properties enable SmSbTe as a unique platform to explore exotic quantum phenomena and advanced functionalities arising from the interplay between magnetism, topology, and electronic correlations.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

et al. 2021

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Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb₂

Singha,

Yuan,

Lee

et al. 2023

Adv Funct Materials

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Advancements in low‐dimensional functional device technology heavily rely on the discovery of suitable materials which have interesting physical properties as well as can be exfoliated down to the 2D limit. Exfoliable high‐mobility magnets are one such class of materials that, not due to lack of effort, has been limited to only a handful of options. So far, most of the attention has been focused on the van der Waals (vdW) systems. However, even within the non‐vdW, layered materials, it is possible to find all these desirable features. Using chemical reasoning, it is found that NdSb2 is an ideal example. Even with a relatively small interlayer distance, this material can be exfoliated down to few layers. NdSb2 has an antiferromagnetic ground state with a quasi 2D spin arrangement. The bulk crystals show a very large, non‐saturating magnetoresistance along with highly anisotropic electronic transport properties. It is confirmed that this anisotropy originates from the 2D Fermi pockets which also imply a rather quasi 2D confinement of the charge carrier density. Both electron and hole‐type carriers show very high mobilities. The possible non‐collinear spin arrangement also results in an anomalous Hall effect.

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Evolving Devil's Staircase Magnetization from Tunable Charge Density Waves in Nonsymmorphic Dirac Semimetals

et al. 2021

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While several magnetic topological semimetals have been discovered in recent years, their band structures are far from ideal, often obscured by trivial bands at the Fermi energy. Square‐net materials with clean, linearly dispersing bands show potential to circumvent this issue. CeSbTe, a square‐net material, features multiple magnetic‐field‐controllable topological phases. Here, it is shown that in this material, even higher degrees of tunability can be achieved by changing the electron count at the square‐net motif. Increased electron filling results in structural distortion and formation of charge density waves (CDWs). The modulation wave‐vector evolves continuously leading to a region of multiple discrete CDWs and a corresponding complex “Devil's staircase” magnetic ground state. A series of fractionally quantized magnetization plateaus is observed, which implies direct coupling between CDW and a collective spin‐excitation. It is further shown that the CDW creates a robust idealized nonsymmorphic Dirac semimetal, thus providing access to topological systems with rich magnetism.

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Topological electronic structure in the antiferromagnet HoSbTe

Cited by 28 publications

References 34 publications

Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb₂

Evolving Devil's Staircase Magnetization from Tunable Charge Density Waves in Nonsymmorphic Dirac Semimetals

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Topological electronic structure in the antiferromagnet HoSbTe

Cited by 28 publications

References 34 publications

Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

Magnetic Topological Semimetal Phase with Electronic Correlation Enhancement in SmSbTe

Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb2

Evolving Devil's Staircase Magnetization from Tunable Charge Density Waves in Nonsymmorphic Dirac Semimetals

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Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb₂