Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Zhao, Wenxuan; Yang, Ming; Xu, Runzhe; Du, Xian; Li, Yidian; Zhai, Kaiyi; Peng, Cheng; Pei, Ding; Gao, Han; Li, Yiwei; Xu, Lixuan; Han, Junfeng; Huang, Yuan; Liu, Zhongkai; Yao, Yugui; Zhuang, Jincheng; Du, Yi; Zhou, Jinjian; Chen, Yulin; Yang, Lexian

doi:10.1038/s41467-023-43882-z

Cited by 5 publications

(1 citation statement)

References 54 publications

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“…Due to their favorable transport properties and high thermoelectric coefficient, they are regarded as outstanding thermoelectric materials for refrigeration and cooling [9,10]. With the study of topological insulators, it has been found that its properties have important applications in future information technology fields such as topological quantum computing, fault-tolerant quantum computing, thermoelectric devices and nonlinear optics [11,12]. Topological insulators, as a material with broad spectral absorption and nonlinear optical properties, have garnered significant attention from researchers [13,14].…”

Section: Introductionmentioning

confidence: 99%

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Yang,

Cen,

Tian

2024

Phys. Scr.

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In this work, the effects of biaxial strain on the electronic structure and optical properties of monolayer Bi2Te2S are studied by the first-principles methods. The calculated results show that the monolayer Bi2Te2S is an indirect band gap semiconductor with a band gap of 1.0 eV. The absence of imaginary frequency in the phonon spectrum indicates that the structure can exist stably. With the increase of tensile strain, the band gap value decreases approximately quasi-linearly. When 10 % tensile strain is applied, the band gap value is reduced to 0eV, achieving the transition from an indirect bandgap semiconductor to a direct bandgap semiconductor. With the increase of compressive strain, the band gap value increases first and then decreases. And the band gap value reaches a maximum of 1.28 eV at -4 % strain. Combined with the density of states analysis, the reason for this change in the band structure is that the contribution of Bi 6p, Te 5p and S 3p state electrons to the conduction band and valence band changes under different strains. The effect of strain on the optical properties shows that when different strains are applied, the monolayer Bi2Te2S has a high absorption coefficient in the entire visible region. The single-layer Bi2Te2S material has a smaller refractive index under tensile strain. The static dielectric function value increases with the increase of tensile strain, and the peak value of the dielectric function decreases and moves to the low energy direction. This indicates that the tensile strain will enhance the migration of photogenerated electron-hole pairs, which is beneficial to improving the utilization of light. This work will provide a theoretical reference for the subsequent study of the electronic and optical properties of monolayer Bi2Te2S.

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Section: Introductionmentioning

confidence: 99%

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Yang,

Cen,

Tian

2024

Phys. Scr.

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Ultralong Blue Organic Room‐Temperature Phosphorescence Promoted by Green Assembly

Chen,

Zhu

et al. 2024

Adv Funct Materials

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In recent years, there is a growing interest in developing ultralong organic room‐temperature phosphorescence (ORTP) with lifetimes in the range of seconds. As one of the important three primary colors, ultralong blue ORTP is an indispensable core component in RTP regulation and application, however, the large Stokes shift characteristics pose certain challenges in developing ultralong blue ORTP. Here, a new family of blue phosphors are synthesized and ultralong blue ORTP are realized through crystal assembly in water and organic phase. Remarkably, compared to crystal materials obtained in organic phases, assembly materials obtained in water enabled long‐lived blue ORTP with lifetimes up to 2.3 s and phosphorescence quantum yield reached as high as 29.27%. In addition to the efficient and green assembly form, such dark blue ORTP materials possessed high thermal stability and flexible tunability. Moreover, the superiority of the selected assembly components is demonstrated by comparing them with polymer assembly and the proposed blue ORTP materials show great potential in an organic programmable information encryption/anti‐counterfeiting.

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Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi₄Br₄

Gong,

Lai,

Miao

et al. 2024

Small Methods

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The defects have a remarkable influence on the electronic structures and the electric transport behaviors of the matter, providing the additional means to engineering their physical properties. In this work, a comprehensive study on the effect of Br‐vacancies on the electronic structures and transport behaviors in the high‐order topological insulator Bi4Br4 is performed by the combined techniques of the scanning tunneling microscopy (STM), angle‐resolved photoemission spectroscopy (ARPES), and physical properties measurement system along with the first‐principle calculations. The STM results show the defects on the cleaved surface of a single crystal and reveal that the defects are correlated to the Br‐vacancies with the support of the simulated STM images. The role of the Br‐vacancies in the modulation of the band structures has been identified by ARPES spectra and the calculated energy‐momentum dispersion. The relationship between the Br‐vacancies and the semiconducting‐like transport behaviors at low temperature has been established, implying a Mott variable ranging hopping conduction in Bi4Br4. The work not only resolves the unclear transport behaviors in this matter, but also paves a way to modulate the electric conduction path by the defects engineering.

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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Cited by 5 publications

References 54 publications

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Ultralong Blue Organic Room‐Temperature Phosphorescence Promoted by Green Assembly

Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi₄Br₄

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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Cited by 5 publications

References 54 publications

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi2Te2S

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi2Te2S

Ultralong Blue Organic Room‐Temperature Phosphorescence Promoted by Green Assembly

Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi4Br4

Contact Info

Product

Resources

About

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi₂Te₂S

Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi₄Br₄