The addition of inorganic materials with high thermoelectric properties is a popular approach to modulate the performance of Poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT‐PSS), but, the representative hybridization of PEDOT‐PSS and toxic Te or Bi is not practical considering safety. Here, we report a PEDOT‐PSS film including Ga‐ZnO (GZO) nanoparticles, which has higher reproducibility and thermoelectric properties. Interestingly, the PEDOT‐PSS film containing GZO nanoparticle of 1 atom% Ga exhibited a higher in‐plane thermoelectric power factor (38.4 μW m−1 K−2) than the pure PEDOT‐PSS (27.4 μW m−1 K−2), which is one of the highest values when compared to previous metallic oxide/PEDOT‐PSS or PEDOT system. The present results suggest a simple approach for electrical conductivity improvement of PEDOT‐PSS film: the Zn and Ga components are an efficient carrier promoter for improving the crystal growth and conformation of PEDOT.