Topological crystalline insulator states in Pb1−xSnxSe

Dziawa, P.; Kowalski, B.J.; Dybko, K.; Buczko, R.; Szczerbakow, A.; Szot, M.; Łusakowska, E.; Balasubramanian, T.; Wojek, Bastian M.; Berntsen, Magnus H.; Tjernberg, Oscar; Story, T.

doi:10.1038/nmat3449

Cited by 789 publications

(905 citation statements)

References 27 publications

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“…These predictions were confirmed by ARPES measurements on band-inverted Pb 0.77 Sn 0.23 Se [27] and Pb 0.65 Sn 0.35 Te [28]. Since these TI states exist only on certain crystal surfaces, this class of materials is referred to as topological crystalline insulators [29].…”

mentioning

confidence: 54%

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF 2 substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb 0.92 Eu 0.08 Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle g is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.

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mentioning

confidence: 54%

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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“…11) was in good qualitative agreement with the theory; they also showed that the cousin material PbTe does not present any surface state. The other one by Dziawa et al 162) reported the TCI phase in Pb 0:77 Sn 0:23 Se, which shows a transition to a trivial phase upon increasing the temperature. The work by Xu et al published later 164) reported a TCI phase in Pb 0:6 Sn 0:4 Te and a trivial phase in Pb 0:8 Sn 0:2 Te, together with spin-resolved ARPES data showing helical polarization on each of the double Dirac cones.…”

Section: Topological Crystalline Insulatormentioning

confidence: 96%

Topological Insulator Materials

2013

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Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.

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“…For example, Pb 1–x Sn x Se is a narrow direct bandgap semiconductor with promising applications in mid‐infrared photodetection (1–3 μm), topological crystalline insulators and high‐speed logic devices due to the doping of Pb 104, 107, 195, 196. He and co‐workers104 reported the synthesis of ultrathin Pb 1–x Sn x Se nanoplates via a simple doping process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Topological crystalline insulator states in Pb1−xSnxSe

Cited by 789 publications

References 27 publications

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Topological Insulator Materials

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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