Topochemical transformation of two-dimensional single crystalline Na0.5Bi0.5TiO3–BaTiO3 platelets from Na0.5Bi4.5Ti4O15 precursors and their piezoelectricity

Jiang, Chao; Zhang, Dou; Zhou, Kechao; Yan, Haixue; Zhang, Hangfeng; Abrahams, Isaac

doi:10.1039/c7ta01591g

Cited by 9 publications

(2 citation statements)

References 49 publications

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“…For instance, when 2D (Na 0.5 Bi 0.5 ) 0.93 Ba 0.07 TiO 3 is prepared from the parent Na 0.5 Bi 4.5 Ti 4 O 15 structure, stripe-like domains are converted to lamellar domains. [106] Thus, by controlling the domains, the physical characteristics can also be tuned for different applications, such as for enhancing the piezoelectric performance. [107] 2D materials from wet topochemical processes typically exhibit surface flaws in the form of terminal groups, domains and crystallinity.…”

Section: Critical Assessment Of the Synthetic Approachesmentioning

confidence: 99%

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Tantis

Talande

Tzitzios

et al. 2023

Adv Funct Materials

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The development of advanced electrode materials for the next generation of electrochemical energy storage (EES) solutions has attracted profound research attention as a key enabling technology toward decarbonization and electrification of transportation. Since the discovery of graphene's remarkable properties, 2D nanomaterials, derivatives, and heterostructures thereof, have emerged as some of the most promising electrode components in batteries and supercapacitors owing to their unique and tunable physical, chemical, and electronic properties, commonly not observed in their 3D counterparts. This review particularly focuses on recent advances in EES technologies related to 2D crystals originating from non‐layered 3D solids (non‐van der Waals; nvdW) and their hallmark features pertaining to this field of application. Emphasis is given to the methods and challenges in top‐down and bottom‐up strategies toward nvdW 2D sheets and their influence on the materials’ features, such as charge transport properties, functionalization, or adsorption dynamics. The exciting advances in nvdW 2D‐based electrode materials of different compositions and mechanisms of operation in EES are discussed. Finally, the opportunities and challenges of nvdW 2D systems are highlighted not only in electrochemical energy storage but also in other applications, including spintronics, magnetism, and catalysis.

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Section: Critical Assessment Of the Synthetic Approachesmentioning

confidence: 99%

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Tantis

Talande

Tzitzios

et al. 2023

Adv Funct Materials

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“…And thus the integration of NBIT flakes into 2D vdW structures have not been thoroughly studied yet. We have demonstrated in the previous work that molten salt method is able to produce uniform, flat and dispersed micrometer‐sized NBIT flakes of ≈10 µm in both length and width with the typical thickness around ≈300 nm, [ 29 ] which are possible to be integrated in the 2D vdW heterostructures. [ 18 ] Subsequently, we expect an efficient electrostatic and ferroelectric modulation for FETs using NBIT as gate dielectric, especially for those with 2D channels.…”

Section: Figurementioning

confidence: 99%

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

et al. 2020

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control, which enhances the immunity to short channel effects. [1-5] Ferroelectric field-effect transistors (FeFETs) with a 2D channel and ferroelectric insulator take advantage of the large polarization charge density and high dielectric constant have recently attracted great attention in nonvolatile memory and low-power logic applications. [6-12] However, direct deposition of conventional ferroelectric insulators, such as hafnium or zirconium oxide (HfO 2 , ZrO 2) onto the 2D channel is challenging due to the absence of dangling bonds at the 2D semiconductor surface. Meanwhile, the manifest demonstration of ferroelectricity is critical to the thickness and doping of HfO 2 or ZrO 2 film. Transistors with polymer ferroelectric (e.g., poly[(vinylidene fluoride)-co-trifluoroethylene)] [P(VDF-TrFE)]) gated 2D channel have been thoroughly explored due to the facile device preparation. [13-16] However, the low polarizing performance and poor reliability of polymer ferroelectrics compared with inorganic ferroelectrics limit their applications in real device applications. Inorganic CuInP 2 S 6 (CIPS) down to ≈4 nm has recently been demonstrated to be compatible with van der Waals (vdW) heterostructure as room-temperature ferroelectric insulator for 2D FeFETs. [17-19] Nevertheless, its relatively low Curie point of 315 K (T c , phase transition from ferroelectric to paraelectric) hinders high temperature ferroelectric applications. Same issue is also found for some of the organic polymer ferroelectrics. Aurivillius bismuth layer-structured ferroelectric (BLSF) Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) has received significant attention in virtue of their high Curie temperature of ≈650 °C, high resistivity, low leakage current, low dielectric loss, low aging rate, and excellent thermal stability, which are attractive for hightemperature piezoelectric devices and ferroelectric nonvolatile random-access memory storage devices. [20-25] A high dielectric constant of 140-180 at room temperature has been reported in the NBIT synthesized by solid-state reaction process, and it is stable over an ultrawide temperature range from room temperature to ≈400 °C. [26] However, NBIT prepared by traditional solid-state reaction methods inevitably suffers from these issues, such as significant impurity phase, irregular flake shape, rough surface. [27] The nanoscale NBIT flakes synthesized by wet chemical methods have the problem of severe agglomeration Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS 2) FeFETs are fabricated in a full vdW stacking structur...

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Plate-like Ca3Co4O9: A novel lead-free piezoelectric material

Shi

Cao²,

Araújo

et al. 2021

Applied Surface Science

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Topochemical transformation of two-dimensional single crystalline Na_0.5Bi_0.5TiO₃–BaTiO₃ platelets from Na_0.5Bi_4.5Ti₄O₁₅ precursors and their piezoelectricity

Abstract: Large piezoresponse strain in NBBT platelets synthesized using a topochemical route.

Cited by 9 publications

References 49 publications

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Plate-like Ca3Co4O9: A novel lead-free piezoelectric material

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Topochemical transformation of two-dimensional single crystalline Na0.5Bi0.5TiO3–BaTiO3 platelets from Na0.5Bi4.5Ti4O15 precursors and their piezoelectricity

Abstract: Large piezoresponse strain in NBBT platelets synthesized using a topochemical route.

Cited by 9 publications

References 49 publications

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Non‐van der Waals 2D Materials for Electrochemical Energy Storage

Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

Plate-like Ca3Co4O9: A novel lead-free piezoelectric material

Contact Info

Product

Resources

About

Topochemical transformation of two-dimensional single crystalline Na_0.5Bi_0.5TiO₃–BaTiO₃ platelets from Na_0.5Bi_4.5Ti₄O₁₅ precursors and their piezoelectricity

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor