2017
DOI: 10.1016/j.orgel.2016.11.026
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Top-gate organic field-effect transistors fabricated on paper with high operational stability

Abstract: We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat™ HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 ± 1.1 × 10-1 cm 2 /Vs, average threshold voltage values of-1.4 ± 0.2 V, and average on/off current ratio of 10 5. OFETs also display excellent operational stability demonstrated by stabl… Show more

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Cited by 36 publications
(19 citation statements)
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References 24 publications
(35 reference statements)
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“…One example is PowerCoatt HD from Arjowiggins Creative Papers, which was introduced in 2014. On this substrate, Wang et al 40 and later Raghuwanshi et al 41 fabricated organic TFTs based on a phaseseparating blend of TIPS pentacene and either PTAA or polystyrene. The gate dielectric was a stack of an insulating polymer (either 45 nm-thick Cytop or 160 nm-thick PVP, deposited by spin-coating) and an insulating metal oxide (40 nm-thick Al 2 O 3 and/or HfO 2 , deposited by atomic layer deposition).…”
Section: Organic Transistors On Nanocellulose Supercalendered and Spmentioning
confidence: 99%
“…One example is PowerCoatt HD from Arjowiggins Creative Papers, which was introduced in 2014. On this substrate, Wang et al 40 and later Raghuwanshi et al 41 fabricated organic TFTs based on a phaseseparating blend of TIPS pentacene and either PTAA or polystyrene. The gate dielectric was a stack of an insulating polymer (either 45 nm-thick Cytop or 160 nm-thick PVP, deposited by spin-coating) and an insulating metal oxide (40 nm-thick Al 2 O 3 and/or HfO 2 , deposited by atomic layer deposition).…”
Section: Organic Transistors On Nanocellulose Supercalendered and Spmentioning
confidence: 99%
“…In the past, we introduced an approach that enabled low-voltage operation and improved environmental and operational stability of μc-OTFTs ( 15 , 20 ). This approach consists of using a bilayer gate dielectric (for example, CYTOP/metal oxide) instead of the commonly used single-layer gate dielectric (for example, CYTOP or metal oxide) and has been proven effective in OTFTs with channel layers comprising either small molecules ( 20 , 27 ), polymers ( 13 ), or small-molecule/polymer blends ( 13 , 20 ).…”
Section: Introductionmentioning
confidence: 99%
“…The SS value versus the gate capacitance for the fabricated OFETs using different polymer dielectric materials is compared in Fig. 3(c) [46]. It can be seen that low voltage OFETs via the LDTOFET technology, using different GI materials, exhibit a similar level of Nss, which is one to two order less than that of previous work [24,27,47,48].…”
Section: B Different Materials and Processesmentioning
confidence: 86%