2015
DOI: 10.1016/j.microrel.2015.06.037
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Top-down delayering to expose large inspection area on die side-edge with Platinum (Pt) deposition technique

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Cited by 11 publications
(6 citation statements)
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“…In the previous studies, sacrificial dummy as a polishing balance, platinum (Pt) as an etching mask, and lateral delayering with adapted polishing plate were used to counteract the edge effect [11][12][13]. Other studies focused on the impact of pad properties [14][15], cloth roughness [16], slurry particle size [17][18], and interaction mechanism [19][20] on the material removal rate and polishing uniformity.…”
Section: Introductionmentioning
confidence: 99%
“…In the previous studies, sacrificial dummy as a polishing balance, platinum (Pt) as an etching mask, and lateral delayering with adapted polishing plate were used to counteract the edge effect [11][12][13]. Other studies focused on the impact of pad properties [14][15], cloth roughness [16], slurry particle size [17][18], and interaction mechanism [19][20] on the material removal rate and polishing uniformity.…”
Section: Introductionmentioning
confidence: 99%
“…Device delayering is a common failure analysis technique in which the layers are removed from top to bottom. The common delayering methods include FIB tools that yield delayered areas of 20 x 20 μm (Ga FIB tool [5][6][7]) and 100 x 100 μm (Xe plasma FIB tool [7][8][9][10]). In addition, broad ion beam (BIB) milling is effective in delayering 300 mm wafers and wafer pieces [11][12][13] and provides a large slope area on the sample that reveals all device layers.…”
Section: Introductionmentioning
confidence: 99%
“…The delayering technique allows top-down, whole chip characterization. The primary challenges presented by a vertical stack are looking through many dissimilar layers and attempting to investigate different layers simultaneously [3]. SEM columns and related analytical techniques meet the FA requirements of the semiconductor industry; however, sample preparation lags behind.…”
Section: Introductionmentioning
confidence: 99%
“…Top-down delayering using conventional mechanical preparation techniques is a difficult to control process that does not allow targeting of a specific depth or layer [4][5]. Gallium and xenon focused ion beam (FIB) tools have also been employed [3][4][5]; both FIB types provide a relatively small delayered area (Ga FIB, ~20 x 20 µm [4]; Xe FIB, ~100 x 100 µm [1][2]6]). These size limitations frequently prevent the preparation of a large slope area that exposes all the device layers simultaneously.…”
Section: Introductionmentioning
confidence: 99%