Top-down delayering by low energy, broad-beam, argon ion milling — a solution for microelectronic device process control and failure analyses

Nowakowski, Paweł; Ray, Mary; Fischione, Paul; Sagar, James

doi:10.1109/asmc.2017.7969206

Cited by 7 publications

(5 citation statements)

References 5 publications

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“…It has already been successfully demonstrated that CT with resolutions down to 500 nm is a useful tool to characterize contacts with several micrometers in diameter [20][21][22]. However, current generation contacts are narrower than the resolution of these devices [14,23]. Therefore, nano CT methods are needed to meet the increased requirements for an analysis tool.…”

Section: Description Of the Selected Samplesmentioning

confidence: 99%

“…(b) shows a schematic enlargement of a single contact from the SI substrate. A cross-section of the volume and enlarged sections of it are shown in c-e. Based on publicly available information, these structures are expected to be between 100-200 nm [15,16,23,45,46]. In the enlarged view (e), two additional structure sizes were determined from the image and also specified.…”

Section: Semiconductor Samplementioning

confidence: 99%

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Laboratory-Based Nano-Computed Tomography and Examples of Its Application in the Field of Materials Research

Müller

Graetz²,

Balles³

et al. 2021

Crystals

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In a comprehensive study, we demonstrate the performance and typical application scenarios for laboratory-based nano-computed tomography in materials research on various samples. Specifically, we focus on a projection magnification system with a nano focus source. The imaging resolution is quantified with common 2D test structures and validated in 3D applications by means of the Fourier Shell Correlation. As representative application examples from nowadays material research, we show metallization processes in multilayer integrated circuits, aging in lithium battery electrodes, and volumetric of metallic sub-micrometer fillers of composites. Thus, the laboratory system provides the unique possibility to image non-destructively structures in the range of 170–190 nanometers, even for high-density materials.

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Section: Description Of the Selected Samplesmentioning

confidence: 99%

Section: Semiconductor Samplementioning

confidence: 99%

Laboratory-Based Nano-Computed Tomography and Examples of Its Application in the Field of Materials Research

Müller

Graetz²,

Balles³

et al. 2021

Crystals

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show abstract

“…Compared to other CD metrology techniques like critical dimension scanning and transmission electron microscopy (CD-SEM and CD-TEM) 6,7 and optical critical dimension (OCD), XCD ® (Bruker trademark for CD-SAXS) possesses several advantages. First, XCD is not a destructive method in contrast to various approaches based on electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

Deep learning for the analysis of x-ray scattering data from high-aspect ratio structures

Baranovskiy

Grinberg

Greene

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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In recent years, Deep Learning (DL) algorithms employing artificial neural networks (NN) have been shown to be a powerful tool for the classification and quantification of images including intensity data from various x-ray scattering techniques. These algorithms generally require massive, labeled datasets for training and validating the NNs. Such datasets can be extremely difficult to obtain from measurements for several reasons. The size of the dataset is limited by the variation in available samples and the time available to measure the samples. The labels are limited by both the number and quality of available reference measurements. In this work we will discuss the use of DL for the analysis of critical dimension small angle x-ray scattering (CD-SAXS) data from high-aspect ratio (HAR) structures encountered in 3D NAND and DRAM memories. We have developed a novel solution for the automatic generation and labeling of large synthetic datasets using “realistic simulations” of the x-ray scattering data. Our solution includes instrumental artifacts such as background scattering and Poisson noise normally found in real x-ray images. Additionally, we have included structural variations based on parameters obtained from limited reference data, e.g., cross-section SEM images, which are critical to prevent overfitting of the DL model and improve the accuracy of the analysis. The realistic simulations are generated automatically using the NanoDiffract for XCD (NDX) software. The synthetic data are then used to train a convolutional neural network (CNN) that can be deployed and used for real-time inference. We demonstrate this approach by evaluating single-shot alignment and tilt of HAR memory hole structures. The CNN was validated with experimental data collected and analyzed using a Sirius-XCD® tool. Validation with reference data from production quality wafers resulted in an R2 > 0.95 and precision 3σ < 0.02 degree with a significant reduction in measurement time per site.

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“…Simultaneously, a microtrench structure frequently forms close to the bottom region of the tapered etch hole. The cross-section of the microtrench generates a noncircular channel with spike-wise deformation, which can further degrade the uniformity of the electrical characteristics [25,26]. Although the electrical behavior of noncircular channel shape has been reported in some studies [27], it is not clear how the spike affects electrical properties of the cell and how V TH is determined by the spike.…”

Section: Introductionmentioning

confidence: 99%

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Go,

Yoon,

Park

et al. 2023

Micromachines

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The instability in threshold voltage (VTH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the VTH of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and VTH in two-spike cells with different heights (HSpike) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory.

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Top-down delayering by low energy, broad-beam, argon ion milling — a solution for microelectronic device process control and failure analyses

Cited by 7 publications

References 5 publications

Laboratory-Based Nano-Computed Tomography and Examples of Its Application in the Field of Materials Research

Laboratory-Based Nano-Computed Tomography and Examples of Its Application in the Field of Materials Research

Deep learning for the analysis of x-ray scattering data from high-aspect ratio structures

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

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