Abstract:In this paper we describe efforts to define the three-dimensional structure of dislocations found in the failure region of high power laser diodes which suffered catastrophic damage as a result of high-current operation in accelerated life-testing.Broad area, multi-mode single emitter InGaAs/AlGaAs strained quantum-well laser diodes at 920-980 nm have become indispensable as pumps for fiber amplifiers used for long haul fiberoptic telecommunications [1]. Commercial diodes have advertised average mean time befo… Show more
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