2020
DOI: 10.1016/j.electacta.2020.136800
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To achieve ultrasensitive electrochemical detection of mercury ions employing metallic 1T-MoS2 nanosheets

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Cited by 17 publications
(6 citation statements)
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“…Moreover, it also possesses higher catalytic activity because both the edges and basal plane are catalytically active [ 124 ]. For this reason, modification of electrochemical sensor with 1T-MoS 2 has demonstrated excellent sensing performance, surpassing that of electrochemical sensor modified with 2H-MoS 2 [ 125 ]. Despite its advantages for electrochemical applications, 1T-MoS 2 is a metastable material, and its mechanisms for stable performance are yet to be clarified [ 126 ].…”
Section: Transition Metal Dichalcogenides (Tmdcs)mentioning
confidence: 99%
“…Moreover, it also possesses higher catalytic activity because both the edges and basal plane are catalytically active [ 124 ]. For this reason, modification of electrochemical sensor with 1T-MoS 2 has demonstrated excellent sensing performance, surpassing that of electrochemical sensor modified with 2H-MoS 2 [ 125 ]. Despite its advantages for electrochemical applications, 1T-MoS 2 is a metastable material, and its mechanisms for stable performance are yet to be clarified [ 126 ].…”
Section: Transition Metal Dichalcogenides (Tmdcs)mentioning
confidence: 99%
“…The LOD value of 1.54 × 10 −19 m was calculated for 1T‐MoS 2 ‐modified GCE while the value of 1.46 × 10 −13 m was reported for 2H‐MoS 2 ‐modified GCE showing six order difference in the magnitude. [ 29 ]…”
Section: Electrochemical Pollutant Sensors Based On Functional Electrmentioning
confidence: 99%
“…Another type of nanoparticle that can be used for sensing is 2D materials such as graphene and molybdenum disulfide. Until now, few studies have reported the electrochemical detection of heavy metals such as cadmium (II) [16] and mercury [17] with MoS2-2D functionalized with N atoms and with the T-MoS2 phase, respectively. Molybdenum disulfide as bulk material is an indirect semiconductor with a bandgap of 1.2 eV while as a monolayer, it turns into a direct semiconductor with a bandgap of 1.8 eV with more active sites formed due to higher surface area, formation of channels for ion adsorption, and intercalation that could be useful for electrochemical sensing [18].…”
Section: Introductionmentioning
confidence: 99%