TIVA and SEI developments for enhanced front and backside interconnection failure analysis

Cole, Edward I.; Tangyunyong, Paiboon; Benson, David A.; Barton, Daniel L.

doi:10.1016/s0026-2714(99)00136-5

Cited by 50 publications

(16 citation statements)

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“…The images provide morphological information, such as grain boundaries, grain sizes, and positions of impurities. This method has been used to evaluate the quality of solar cells and semiconducting devices [7][8][9][10].…”

Section: Methodsmentioning

confidence: 99%

Local transport properties of coated conductors by laser-scan imaging methods

Kim¹,

Jo²,

Nam³

et al. 2016

Progress in Superconductivity and Cryogenics

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To observe the superconducting current and structural properties of high critical temperature (T c ) superconductors (HTS), we suggest the following imaging methods: Room temperature imaging (RTI) through thermal heating, low-temperature bolometric microscopy (LTBM) and Raman scattering imaging. RTI and LTBM images visualize thermal-electric voltages as different thermal gradients at room temperature (RT) and superconducting current dissipation at near-T c , respectively. Using RTI, we can obtain structural information about the surface uniformity and positions of impurities. LTBM images show the flux flow in two dimensions as a function of the local critical currents. Raman imaging is transformed from Raman survey spectra in particular areas, and the Raman vibration modes can be combined. Raman imaging can quantify the vibration modes of the areas. Therefore, we demonstrate the spatial transport properties of superconducting materials by combining the results. In addition, this enables visualization of the effect of current flow on the distribution of impurities in a uniform superconducting crystalline material. These imaging methods facilitate direct examination of the local properties of superconducting materials and wires.

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Section: Methodsmentioning

confidence: 99%

Local transport properties of coated conductors by laser-scan imaging methods

Kim¹,

Jo²,

Nam³

et al. 2016

Progress in Superconductivity and Cryogenics

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“…The use of a laser beam to perturb a device-under-test (DUT) while monitoring its behavior was explored and [6], thermallyinduced voltage alternation (TIVA) [7], and opticalbeam-induced resistance change (OBIRCH) [8]. LIVA is based on photoelectric laser stimulation (PLS), whereas TIVA and OBIRCH are based on thermal laser stimulation (TLS).…”

Section: Laser Stimulation Techniquesmentioning

confidence: 99%

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

Kim¹,

Lee²,

Lee³

et al. 2011

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flipflop based on a sense amplifier and a photon-emitting device. This method can be used even with deepsubmicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 μm CMOS process.Index Terms-Circuit testing, deep submicron CMOS technology, failure analysis, photon emission, picosecond imaging circuit analysis (PICA)

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“…Other techniques such as Thermally Induced Voltage Alteration (TIVA) were used to identify electrical shorts. The physics of TIVA [5] for integrated circuit (IC) examination employs the constant-current biasing method used in Charge-Induced Voltage Alteration (CIVA) [6] and Light-Induced Voltage Alteration (LIVA) [7]. The constant-current biasing approach provides an extremely sensitive method for detection of subtle changes in the IC or MEMS power demand.…”

Section: Approachmentioning

confidence: 99%

The Sandia MEMS Passive Shock Sensor : FY08 failure analysis activities.

Walraven¹,

Baker²,

Clemens³

et al. 2008

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This report summarizes failure analysis activities performed on various designs of the MEMS based Passive Shock Sensor (PSS). The failure analysis activities in this report focus on identifying root cause of failures observed at both die and package levels. The findings from these failure analyses have and will lead to implementation of corrective actions focusing on maturing the MEMS-based PSS and meeting product deliverables and milestones.4

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TIVA and SEI developments for enhanced front and backside interconnection failure analysis

Cited by 50 publications

References 1 publication

Local transport properties of coated conductors by laser-scan imaging methods

Local transport properties of coated conductors by laser-scan imaging methods

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

The Sandia MEMS Passive Shock Sensor : FY08 failure analysis activities.

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