1987
DOI: 10.1109/t-ed.1987.22980
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Titanium nitride local interconnect technology for VLSI

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Cited by 45 publications
(9 citation statements)
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“…97,98 Consequently, TiN has been one of the most frequently used transition metal nitrides which has resulted in a good understanding of the deposition techniques, including CMOS compatible processes. 99,100 The optical properties of transition metal nitrides strongly depend on the deposition conditions and can be optimized to nearly match the optical properties of Au. 84,101,102 Fig.…”
Section: Resultsmentioning
confidence: 99%
“…97,98 Consequently, TiN has been one of the most frequently used transition metal nitrides which has resulted in a good understanding of the deposition techniques, including CMOS compatible processes. 99,100 The optical properties of transition metal nitrides strongly depend on the deposition conditions and can be optimized to nearly match the optical properties of Au. 84,101,102 Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Metallic behavior of TiN combined with its hardness and chemical stability has attracted attention in microelectronics research [5]. Adjustable optical properties and stoichiometry of TiN thin films were examined in the 1990s [6].…”
Section: Introductionmentioning
confidence: 99%
“…Heat assisted magnetic recording [21], solar/thermophotovoltaics [22], plasmon enhanced photocatalysis [23][24][25], and plasmon assisted chemical vapor deposition [26] are some of the applications that could take advantage of durable plasmonic TiN nanostructures. TiN is a chemically inert material widely used in CMOS and biomedical devices [5,[27][28][29][30]. Combined with the localized surface plasmon resonance (LSPR) peak located in the biological transparency window [17], bio-compatibility of the material makes it a promising alternative for plasmonic photothermal therapy [18].…”
mentioning
confidence: 99%
“…TiN until now is been widely used in semiconductor industry as a barrier metal for submicron metallization [4,5] and for local interconnect contact material in VLSI [6] technology for building CMOS devices due to its excellent thermal stability [4,5] and reduction in parasitic capacitance by the use of minimum geometry junctions [6] thus improving the overall circuit performance. In our case TiN serves as an dual advantage by exploiting its properties for MEA material as well as interconnect for the BiCMOS devices such as a npn transistor, resistor etc.…”
Section: Bicmos Devices and Its Fabricationmentioning
confidence: 99%