Titanium film deposition by high-power impulse magnetron sputtering: Influence of pulse duration

Jing, Fengjuan; Yin, T.L.; Yukimura, Ken; Sun, Hongqi; Leng, Y.X.; Huang, Nan

doi:10.1016/j.vacuum.2012.06.003

Cited by 57 publications

(20 citation statements)

References 33 publications

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“…Such changes are typical for the DCMS to HiPIMS process transition, reflecting the influence of a higher ion density in the HiPIMS case. 18 Similar changes found in our case approve the ion influence in the BPH mode, altering the film structure in the same way. At the same time, the XRD line broadening remains nearly unaffected, implying negligible changes in the average grain size.…”

supporting

confidence: 83%

Ion density evolution in a high-power sputtering discharge with bipolar pulsing

Britun

Michiels

Godfroid

et al. 2018

Applied Physics Letters

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Time evolution of sputtered metal ions in high power impulse magnetron sputtering (HiPIMS) discharge with a positive voltage pulse applied after a negative one (regime called “bipolar pulse HiPIMS”—BPH) is studied using 2-D density mapping. It is demonstrated that the ion propagation dynamics is mainly affected by the amplitude and duration of the positive pulse. Such effects as ion repulsion from the cathode and the ionization zone shrinkage due to electron drift towards the cathode are clearly observed during the positive pulse. The BPH mode also alters the film crystallographic structure, as observed from X-ray diffraction analysis.

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supporting

confidence: 83%

Ion density evolution in a high-power sputtering discharge with bipolar pulsing

Britun

Michiels

Godfroid

et al. 2018

Applied Physics Letters

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“…More attention was dedicated to the as-deposited starting layers; all titanium samples show similar diffractograms (Figure 6b) [58]. Influences of underlaying surface and deposition conditions will be discussed later.…”

Section: Structural Parametersmentioning

confidence: 99%

Tailoring anatase nanotubes for the photovoltaic device by the anodization process on behalf of microstructural features of titanium thin film

Mandić

Plodinec

Kereković

et al. 2017

Solar Energy Materials and Solar Cells

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We prepared the anatase nanotubes (NT) and other nanostructured titania as electron accepting/transmitting layers in solar cells, using titanium anodization. Upon gaining control over the anodization, the parameters were held constant in order to observe the role of the deposited layers (by electron beam evaporation and magnetron sputtering) on the NT yield. The structural and microstructural parameters were investigated using FIB-FEGSEM, XRD, Raman and GIXRD. Differences in the titanium layers play a significant role on the type of titania nanostructures achieved. Only dense homogeneous titanium layer surface, uniform in thickness and without cracks at macroscale, with uniformly seized isotropic nanoparticles, will enable uniform electrochemical etching and thus favourable, reproducible formation of the titania NT, and upon thermal treatment the anatase NT. Transparent conductive oxide (TCO) layers, which are not in direct contact to the NT, can also exhibit influence on the morphology of the titania NT charge transfer layer. In order to reach large uniform areas of nanotubes, which is required for solar cell application, the preparation of titanium layer has to be tailored

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“…Simanullang et al [8] used the RFMS technique to successfully obtain a high crystal structure of GaN thin film at a low temperature (≤200 °C). High power impulse magnetron sputtering (HiPIMS) also a part of the magnetron sputtering power supply that has been used to fabricate thin films [12]- [14]. HiPIMs have a significant fraction of ionized sputtered to create a high-performance thick coating, which has improved the thin film consistency even further [15].…”

Section: Introductionmentioning

confidence: 99%

Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique

Othman¹,

Nayan²,

Mustafa³

et al. 2021

Elektrika

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To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN films, higher temperature or extra time deposition are needed, which is not compatible with industrial fabrication process. Here, a co-sputtering technique between two power supplies of magnetron sputtering (which are RF and HiPIMS) is introduced to deposit the AlGaN thin films. The AlGaN thin films were deposited at various RF power to study their effect on structural properties and morphology of the thin films. AlGaN films were sputtered simultaneously on silicon (111) substrate for short time and at room temperature using GaN and Al target. Then, the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profiler to study their properties. XRD shows the GaN (101) and (013) plane for the AlGaN deposited at RF power of 30 W. Also there only GaN (101) for the AlGaN with 50 W RF power. Yet, the 70 W RF power shows the amorphous structure of AlGaN. The roughness and the grain size of AlGaN film from AFM analysis showed the trend of decreasing and increasing respectively. The roughness of the AlGaN films with 30 W power was 0.82 nm, 0.85 nm for 50 W, and 0.46 nm for 70 W RF power. The grain size of the AlGaN films was 30.06 nm, 32.10 nm, and 37.65 nm for RF power of 30 W, 50 W, and 70 W respectively. The profilometer found that the thickness of the AlGaN films was decreasing with increasing of RF power. This paper can demonstrate a successful co-sputtering technique of AlGaN. Despite AlGaN crystal structure was not able to found out in the XRD analysis, the effect of RF power has been studied to give significant effects on AlGaN thin film deposition.

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Titanium film deposition by high-power impulse magnetron sputtering: Influence of pulse duration

Cited by 57 publications

References 33 publications

Ion density evolution in a high-power sputtering discharge with bipolar pulsing

Ion density evolution in a high-power sputtering discharge with bipolar pulsing

Tailoring anatase nanotubes for the photovoltaic device by the anodization process on behalf of microstructural features of titanium thin film

Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique

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