2023
DOI: 10.3390/ma16083147
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Titanium Dioxide Thin Films Produced on FTO Substrate Using the Sol–Gel Process: The Effect of the Dispersant on Optical, Surface and Electrochemical Features

Abstract: In this study, TiO2 thin films formed by dip-coating on an FTO substrate were obtained and characterized using surface, optical and electrochemical techniques. The impact of the dispersant (polyethylene glycol-PEG) on the surface (morphology, wettability, surface energy), optical (band gap and Urbach energy) and electrochemical (charge-transfer resistance, flat band potential) properties were investigated. When PEG was added to the sol–gel solution, the optical gap energy of the resultant films was reduced fro… Show more

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Cited by 6 publications
(5 citation statements)
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“…The most common precursors for this process are silicon alkoxides, which in aqueous silicate systems under acidic or basic conditions undergo hydrolysis and condensation reactions, forming three-dimensional gel networks or sols. This type of synthesis is also used for materials based on precursors of titania, e.g., silica–titania and titania layers. However, on the contrary to the silicon alkoxides, the reactivity toward hydrolysis reaction of the metal alkoxides is strongly increased; thus, their reactivity is often moderated by chemical modifications using compounds containing, e.g., β-diketonate groups. ,, …”
Section: Experimental Methodsmentioning
confidence: 99%
“…The most common precursors for this process are silicon alkoxides, which in aqueous silicate systems under acidic or basic conditions undergo hydrolysis and condensation reactions, forming three-dimensional gel networks or sols. This type of synthesis is also used for materials based on precursors of titania, e.g., silica–titania and titania layers. However, on the contrary to the silicon alkoxides, the reactivity toward hydrolysis reaction of the metal alkoxides is strongly increased; thus, their reactivity is often moderated by chemical modifications using compounds containing, e.g., β-diketonate groups. ,, …”
Section: Experimental Methodsmentioning
confidence: 99%
“…The flat band potential for n-type semiconductors can be thought of as the conduction band potential [62]. The flat band potential was calculated from the X-axis intercept in the linear region [75]. The flat band potential change after surface modification could be caused by trapped electrons or holes at the interface states and fixed charge.…”
Section: Mott-schottkymentioning
confidence: 99%
“…[52] The equivalent band gap values of NT/Chl, NT/PD, NT/PD-Chl were calculated to be 3.08 eV, 2.98 eV and 2.90 eV respectively, based on the Tauc plot (Figure 8). [53]…”
Section: Uv-vis Analysis and Bandgap Energymentioning
confidence: 99%