Titanium-aluminum nitride film growth and related chemistry using dimethylamino-based precursors

Endle, J. P.; Sun, Yiyong; Silverman, Joel S.; Nguyen, Nhut; Cowley, Alan H.; White, John; Ekerdt, John G.

doi:10.1016/s0040-6090(00)01879-4

Cited by 10 publications

(5 citation statements)

References 24 publications

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“…Both TiN and TiAlN films can be prepared by physical 2,5,7 as well as chemical 8,9 vapour deposition techniques. Among all these methods, reactive magnetron sputtering is preferred for the deposition of TiN and TiAlN thin films because it permits a wide variation of deposition parameters and enables the preparation of metallic as well as compound films for a wide range of applications.…”

Section: Introductionmentioning

confidence: 99%

Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Irudayaraj

Kuppusami

Kalainathan

2008

Surface Engineering

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Nanocrystalline thin films of titanium nitride and titanium aluminium nitride were deposited on (111) Si substrates by reactive dc magnetron sputtering under various nitrogen flowrates and at constant substrate temperature. The effect of nitrogen flowrate on the structural and electrical properties of TiN x and Ti 12x Al x N thin films deposited at substrate temperatures of 973 and 773 K respectively is investigated. TiN x films are polycrystalline at all N 2 flowrates and there is a change of preferred orientation from (200) to (111) with increasing nitrogen flowrates. In contrast, Ti 12x Al x N thin films are polycrystalline only at low nitrogen flowrates (,5 sccm) and show a tendency to become more nanocrystalline with weak (200) preferred orientation at higher nitrogen flowrates. The variation of lattice parameter showed opposite behaviour in these two types of films. Auger electron spectroscopy indicated that the nitrogen concentration of both types of the films gradually increased with increasing nitrogen flowrate and almost reached a constant value at a flowrate of nitrogen >5 sccm. While the resistivity of TiN x films showed a minimum at a nitrogen flowrate of 5 sccm, the resistivity of Ti 12x Al x N films increased with increasing nitrogen flowrate. The variation in the electrical resistivity could be explained on the basis of structural changes occurring in these two types of films.

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Section: Introductionmentioning

confidence: 99%

Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Irudayaraj

Kuppusami

Kalainathan

2008

Surface Engineering

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“…1,2,7 Thin films of TiAlN can be deposited by a variety of techniques such as cathodic arc evaporation, [11][12][13] ion plating, [14][15][16][17] reactive DC/RF sputtering [3][4][5][6]18,19 and chemical vapour deposition. [20][21][22][23] Among all these methods, magnetron sputtering in a reactive nitrogen plasma has emerged as a predominant method for the deposition of TiAlN films owing to several advantages offered by the technique. In the magnetron sputtering system, the magnetic field increases the plasma density which leads to an increase in the current density at the target.…”

Section: Introductionmentioning

confidence: 99%

Influence of nitrogen flow rate on growth of TiAlN films prepared by DC magnetron sputtering

Irudayaraj¹,

Kuppusami²,

Thirumurugesan³

et al. 2007

Surface Engineering

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Thin films of TiAlN were deposited on (111) oriented silicon single crystal substrates from a composite Ti-Al target by DC reactive magnetron sputtering at 773 K under various N 2 flow rates. Substantial influence of N 2 flow rate on the rate of deposition, grain size, crystallinity, composition, hardness and resistivity was observed. While the deposition rate, grain size and the ratio of concentration of Ti to Al of the deposited TiAlN films decreased with increasing N 2 flow rate, the resistivity of the films increased with increasing N 2 flow rate.

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“…Thus, regarding the lack of extended literature on MOCVD Ti 1Àx Al x N coatings, the following parts will mainly focus on thermal CVD and PECVD processes. Anyway, studies on MOCVD processes and specific precursors are available in [21,[56][57][58].…”

Section: Chemical Vapor Deposition (Cvd) Of Ti 1àx Al X N Coatingsmentioning

confidence: 99%

Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review

Uny¹,

Blanquet²,

Schuster³

et al. 2019

Coatings and Thin-Film Technologies

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For several decades, the increasing productivity in many industrial domains has led to a significant and ever-increased interest to protective and hard coatings. In this context, titanium-aluminum nitrides were developed and are now widely used in a large range of applications, due to their high hardness, good thermal stability, and oxidation resistance. This chapter reviews the thermodynamical characteristics of the Ti-Al-N system by reporting the progress made in the description of the Ti-Al-N phase diagram and the main mechanical and chemical properties of Ti 1Àx Al x N-based coatings. As a metastable phase, the existence of the fcc-Ti 1Àx Al x N depends on particular process parameters, allowing stabilizing this desirable solid solution. The influence of process parameters, with a particular interest for chemical vapor deposition (CVD) methods, on morphology and crystallographic structure is then described. The structure of Ti 1Àx Al x N thin films depends also on the aluminum content as well as on the annealing temperature, due to the spinodal nature of the Ti-Al-N system. These changes of crystallographic structure can induce an improvement of the hardness, oxidation resistance, and wear behavior of these coatings. The main mechanical and chemical properties of physical vapor deposition (PVD) and CVD Ti 1Àx Al x N-based coatings are also described.

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Titanium-aluminum nitride film growth and related chemistry using dimethylamino-based precursors

Cited by 10 publications

References 24 publications

Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Influence of nitrogen flow rate on growth of TiAlN films prepared by DC magnetron sputtering

Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review

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Titanium-aluminum nitride film growth and related chemistry using dimethylamino-based precursors

Cited by 10 publications

References 24 publications

Structural properties and electrical resistivity of TiNx and Ti1−xAlxN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Structural properties and electrical resistivity of TiNx and Ti1−xAlxN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Influence of nitrogen flow rate on growth of TiAlN films prepared by DC magnetron sputtering

Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review

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Product

Resources

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Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate

Structural properties and electrical resistivity of TiN_x and Ti_1−xAl_xN films prepared by reactive dc magnetron sputtering: Effect of nitrogen flowrate