“…Monolayer transition metal dichalcogenides (TMDs) are promising materials for advanced applications in high-end electronics, optoelectronics, spintronics, and sensing. , However, the atomic-scale structures such as defects or local strain in TMDs can exert a substantial influence on their material properties, potentially limiting device performance. , As device dimensions continue to shrink, the imperative to detect and locate defects and local strain at the nanoscale becomes increasingly critical. Tip-enhanced Raman spectroscopy (TERS) emerges as a facile and nondestructive tool for addressing these requirements, with the ability to visualize local defects, grain boundaries, edges, and strains. − A typical TERS spectrum of monolayer 2H-MX 2 (M = Mo, W, X = S, Se) includes peaks from first-order Raman modes E ′ and A 1 ′ and the second-order Raman mode 2LA(M). − ,− Some also report Raman inactive mode A 2 ″ due to the local plasmonic field employed in TERS. ,, The E ′, A 1 ′ , and A 2 ″ originate from phonons at the Γ point of the Brillouin zone. In the presence of defects, additional defect-induced phonon modes, such as LA(M), ZO(M), etc.…”